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With the continuous increase in the requirements for power system efficiency and power density in applications such as new energy, fast charging power sources, server power supplies, photovoltaic inverters and industrial motor drives, silicon carbide (SiC) power devices are becoming the focus of industry attention due to their excellent material properties.   Recently, Longten Semiconductor officially launched five new 650V SiC MOSFETs, with current ratings ranging from 7A to 20A and on-resistance ranges from 180mΩ to 600mΩ. This series of products adopts the highly compatible TO-252 surface mount package, which combines excellent heat dissipation performance with a miniaturized design. It is specifically designed for applications with limited space and strict performance requirements, providing a better choice for high-performance power systems. Product features High frequency and low on-resistance improve power conversion efficiency; Fast switching speed, facilitating the miniaturization of high-power density power supplies; High threshold voltage and strong anti-interference ability.   Product series LCG065R180LA4 LCG065R260LA4 LCG065R340LA4 LCG065R480LA4 LCG065R600LA4Recommended application Market significance This series of new products features a higher critical breakdown field strength, a wider bandgap width and a higher thermal conductivity. These outstanding characteristics enable them to exhibit more stable on-resistance and lower switching losses at high temperatures, thus forming significant application advantages. The TO-252 package 650V SiC MOSFET series launched by Longten Semiconductor this time enriches the range of cost-effective SiC devices available for medium and small power applications. Customers can achieve performance upgrades without modifying the existing TO-252 PCB pad design, which helps shorten the development cycle and reduce system costs.   The release of this new product marks Longteng Semiconductor's continuous deepening of its technological layout in the field of third-generation semiconductor devices. In the future, Longten Semiconductor will continue to promote the serialization and platformization development of SiC MOSFET products, helping domestic power semiconductors enhance their competitiveness in the global high-performance power supply market.

         With the advancement of photovoltaic new energy technology, 1500V smart solutions have been widely adopted in ground-mounted power stations worldwide and are also being applied in certain large-scale distributed rooftop systems. By leveraging higher voltage, greater power output, and improved capacity-to-power ratios, this solution significantly reduces overall costs. Jinlan Power Semiconductor's three LE3 215kW energy storage modules, featuring efficient heat dissipation, self-controlled chip technology, and flexible configuration options, aim to address industry pain points in 1500V applications and set a new benchmark for technological innovation in the sector.     600A 1100V INPC Module Based on LE3 Package       Product Introduction           Jinlan Power Semiconductor (Wuxi) Co., Ltd. has launched three LE3 series 215KW INPC energy storage modules, which meet various efficiency and cost requirements. They can be flexibly selected based on the actual application needs of customers. With the core of technological autonomy, modular design, and agile service, they are optimized layer by layer from chips to systems, providing "high efficiency, reliability, and flexibility" triple value for the new energy field.     The model: JL3I600V110SE3E7SS can achieve an output of over 280KW in extreme conditions when paired with Si3N4 AMB.     215KW module - Three-phase efficiency       The maximum junction temperature of the 215KW module chip         Product Feature   Excellent dynamic and static parameters, low voltage drop, low dynamic loss, suitable for high-frequency and high-power application scenarios  IGBT with BV of 1100V, taking into account both power loss and client-side voltage stress considerations  Through a complete set of chip-level and package-level reliability verification  The warpage of the finished module is controlled within 0.3mm, and the coating effect of the superior base surface thermal conductive paste is even more outstanding.  Selecting ZTA/AMB substrates ensures superior heat dissipation performance and enhanced reliability.  Open modular model, combined with customer's operating condition simulation   Core Technology   ◆Chip advantages: Equipped with the 7th generation micro-groove channel cutoff GEN.7 IGBT  ◆ Customization Expansion: Supports customers' customized requirements for multiple power ranges  ◆ Lean production: The MES and ERP systems ensure that production information in the module can be traced.       Application Area Energy storage system Photovoltaic inverter Other three-level applications

STMicroelectronics has launched two 100W high-voltage VIPerGaN converters, extending wide bandgap energy-saving technology to home appliances, building and home automation, smart lighting, as well as consumer products such as TVS and chargers.   The two newly launched power converters are the VIPerGaN100W with a leakage limit current of 3.5A and the VIPerGaN100WB with 4.2A. The latter can briefly withstand a peak power of 125W. This flexible margin prevents designers from overly redundantly designing power circuits when developing devices with inductive loads such as solenoid valves and motors, such as coffee machines, small household appliances, and air conditioners. Both converters are compatible with the globally universal AC input voltage of 85V to 265V and stably output 100W when the input voltage is above 185V.   Both converters are equipped with 700V gallium nitride (GaN) power transistors, ensuring the robustness and high reliability of the converters. The 0.27mΩ on-resistance RDS(on) of the power transistor helps the converter achieve excellent thermal performance. Within the 5mm × 6mm QFN package, a flyback converter and a GaN gate driver are also integrated, eliminating the need for designers to fine-tune the gate resistance and inductance for the cumbersome switching performance optimization debugging work.   On the other hand, the high switching frequency characteristic of GaN power transistors enables circuit designers to achieve excellent energy efficiency and power density by using small-sized passive components. To demonstrate this advantage, STMicroelectronics has launched the 100W USB Type-C PD 3.0 charger reference design EVLVIPGAN100WP based on the VIPerGaN100W design. This solution supports five power output configurations ranging from 5V/3.0A to 20V/5.0A. It adopts a secondary side regulation and optocoupler feedback architecture, with a peak efficiency exceeding 92% and a power density of 24W/in³.   Both VIPerGaN100W and VIPerGaN100WB are equipped with quasi-resonant zero-voltage switching flyback converters. They adopt flexible power management mechanisms such as light-load frequency return and medium-load valley jump period, maintaining high energy efficiency across the full load range by limiting the switching frequency. In the trough jump period mode, stmicroelectronics' self-developed trough locking technology can stably skip the number of troughs, avoid audio frequency band fluctuations, and ensure silent operation under full-load conditions. The no-load burst mode can reduce the standby power consumption to below 30mW.   In addition, the line voltage feedforward can precisely control the electrical energy transmitted in each switching cycle, maintaining a stable output power when the input voltage fluctuates. Meanwhile, the dynamic blanking time limits the variation of the switching frequency to minimize switching losses to the greatest extent. Both converters are integrated with comprehensive electrical safety protection functions, covering input and output overvoltage protection, overheat shutdown, undervoltage power-on protection, and undervoltage power-off protection.

Recently, Maplesemi Semiconductor has launched a series of 750V SiC MOSFET products. Through innovative device structure design, it has achieved a technological breakthrough in zero-voltage turn-off, effectively solving the traditional SiC MOSFET's reliance on negative voltage turn-off, and providing a simpler and more reliable solution for high-density power systems.   Core highlights of the product — Voltage rating margin above 800V, with higher avalanche capability and breakdown voltage than GaN, meeting requirements for 650V/750V applications.   — Supports zero-voltage switching, simplifying drive circuits to reduce cost and size while effectively preventing false turn-on and enhancing system reliability. The product is compatible with traditional negative-voltage shutdown mode, enabling seamless replacement of silicon-based devices and adapting to various circuit topologies.   — Excellent switching characteristics with significantly optimized dynamic parameters, helping systems achieve higher efficiency and power density.   — Superior high-temperature stability and reliability; the product maintains stable performance under elevated temperatures. Tested in our CNAS-accredited laboratory, the entire new product series has passed 1,000-hour reliability validation, ensuring long-term durability in demanding applications.   Product advantages Optimize dynamic parameters such as Qg and Ciss, which are easy to drive and have low switching losses. Enhancing the characteristics of the body diode and an extremely short reverse recovery time further reduces switching losses and improves the overall efficiency of the machine.   Market recognition and customer trust Maplesemi's silicon carbide products have been stably applied in leading domestic power supply enterprises and global top new energy vehicle enterprises. From January to October 2025, the sales of Meipusen's silicon carbide devices achieved a year-on-year growth of 49%, reflecting the market's recognition of the performance and reliability of our products. 04   New product recommendation for zero-voltage shutdown     Typical application efficiency and temperature rise tests Under different input voltages, the efficiency of SICMOS is approximately 0.5% to 1% higher than that of SJMOS. Under the input voltage conditions of AC180V and 264V, the temperature performance of MSF180075MF is better. 3. It is recommended to drive at 15 to 18V, with 18V being even better. Note The tests in this article are based on a 100W flyback power supply + secondary synchronous SR DEMO 2. The DEMO input is 180 to 264V, and the output is 24V3.8A. The load is 24V3.8A as required, and the test CC=3.8A 3. VGS drive voltage: 16V. 4. Comparison sample parameters: MSF180075MF: 750V165mΩ Competitor A: 650V130mΩ Competitor B:650V160mΩ; SJMOS: 650 v150m Ω

Recently, Longten has launched a 600V, 80A, 37mΩ N-channel super junction power MOSFET. Relying on the dual support of advanced superjunction technology and innovative platinum expansion process, the product, with its core advantages of ultra-low loss, excellent body diode characteristics, industrial-grade high reliability and strong scene adaptability, brings a brand-new upgraded solution for high-power and high-efficiency power supply applications. Craftsmanship highlights   Platinum expansion technology, significantly enhancing dynamic performance: The platinum expansion process precisely controls the minority carrier lifetime and optimizes the internal switching characteristics of the device.The measured benefits are as follows: Reduce reverse recovery charge (Qrr) : The typical value is only 722nC, reducing the reverse recovery loss of the diode. Shorten the reverse recovery time (trr) : typically 128.6ns, enhancing the system's switching frequency potential. Smoothing the peak reverse recovery current (Irm=9.05A) : Improves EMI performance and reduces the pressure on peripheral filter design.   Core electrical performance Ultra-low on-resistance: Typical RDS(on) as low as 31 mΩ (max 37 mΩ), significantly reducing conduction losses.   Extremely low gate charge: Typical Qg of 116.8 nC enables fast switching and reduces drive losses.   High current capability: Continuous drain current up to 80 A (Tc = 25°C), pulse current up to 240 A.   100% UIS tested: Single-pulse avalanche energy of 951 mJ ensures robustness under harsh operating conditions.   Actual measurement comparison Through the actual measurement and comparison of switching waveforms under the same working conditions, it is found that Longten Semiconductor's super junction MOSFET has a faster turn-on speed, shorter current trailing during turn-off, smaller VDS spikes and oscillations, a flatter Miller platform, and significantly lower turn-on/turn-off losses than mainstream industry competitors. This can effectively reduce the overall heat consumption of the machine, improve the conversion efficiency of high-frequency power supplies and operational reliability. By comparing the diode waveforms under the same working conditions, it can be seen that Longten Semiconductor's super junction MOSFET, due to the adoption of advanced platinum expansion technology, performs exceptionally well in the reverse recovery process, with a shorter reverse recovery time and a softer reverse recovery process. This feature effectively reduces switching losses and EMI interference, and enhances the system stability and heat dissipation performance under high-frequency operating conditions.   Typical application scenarios Formation power source OBC (On-Board Charger) Communication power supply Charging pile High-power industrial power supply Mining machine power supply

Longten Semiconductor's first high-voltage MOSFET based on the G3 Super Junction 650V new platform -LSD65R150G3 - has been officially released to the market. This device adopts a TO-220F fully insulated package, featuring lower on-resistance, superior gate charge and faster switching speed, providing a new generation of core power solutions for applications such as LED power supplies, high-efficiency adapters, high-power power supplies and industrial power supplies. Core advantageThe LSD65R150G3 is based on Longten Semiconductor's self-developed G3 super-junction technology platform. Through in-depth optimization of cell structure, gate design, and terminal voltage withstand capability, it significantly reduces on-resistance and parasitic capacitance per unit area while maintaining a high 650V breakdown voltage. As the first product from this platform, the LSD65R150G3 achieves a typical on-resistance of 125mΩ and a maximum of 150mΩ at 650V breakdown voltage, while keeping total gate charge as low as 34nC (typical value). This substantially reduces drive and switching losses, enabling power systems to achieve higher frequency and greater power density designs.The test results of Longten Semiconductor's application team show that compared with the previous generation of super junction products, the new generation G3 super junction product LSD65R150G3 has significantly optimized the on-resistance performance. Under the same withstand voltage, the on-resistance is lower, thereby reducing the conduction loss. At the same time, both its total gate charge (Qg) and input capacitance (Ciss) have been significantly reduced, which directly benefits the reduction of switching losses: a lower Qg can reduce driving losses and accelerate switching response, while a smaller Ciss can further increase the switching speed and reduce the demand for driving current. In addition, the avalanche tolerance of this device has been significantly enhanced, with EAS increasing by approximately five times, and its robustness has been greatly improved. It can withstand a higher single avalanche energy impact and has higher reliability under overvoltage or inductive load conditions.   Source: Measured by Longten Laboratory     The product line manager for Longteng MOSFETs stated: "Our goal in designing the G3 platform and the LSD65R150G3 was to help customers achieve higher switching frequencies and smaller form factors while effectively controlling overall system losses. Based on datasheet specifications and actual test results, the LSD65R150G3 offers stable body diode reverse recovery characteristics, sufficient avalanche ruggedness, and controllable high-temperature on-resistance, making it fully capable of serving as a core switching component in applications such as switch-mode power supplies, PD chargers, and industrial power supplies."  

In application scenarios such as new energy frequency conversion, industrial control, photovoltaic energy storage, small household appliance frequency conversion, and servo drive, energy efficiency upgrades, miniaturization, and high reliability have become essential needs in the industry. As the global carbon neutrality strategy continues to advance, countries are tightening energy efficiency standards for electrical equipment. The performance requirements of end customers for power devices have shifted from "just enough" to "breaking through the limit" - higher conversion efficiency, smaller size, and stronger environmental adaptability are reshaping the selection logic of power semiconductors. From IEC energy efficiency standards to the domestic "dual carbon" goals, from the intelligent demands of Industry 4.0 to the green consumption concept at the consumer end, power devices are undergoing a paradigm shift from "silicon-based is sufficient" to "wide bandgap is a must".Traditional silicon-based IPM is gradually approaching its performance ceiling. The physical properties of silicon materials determine that its loss in high-temperature, high-frequency and high-voltage scenarios is difficult to further reduce. The reliability degradation caused by the temperature rise of devices has also become a long-term pain point for system designers. Specifically, the tail current of silicon IGBTs leads to persistently high turn-off losses. The on-resistance of silicon MOSFETs rises sharply with temperature under high voltage, and the device lifespan shortens exponentially in high-temperature environments. These fundamental limitations of silicon-based materials are difficult to overcome merely through structural and process optimization. Facing this industry bottleneck, silicon carbide (SiC), with its natural advantages as a wide bandgap material, has become the best alternative and upgrade solution with lower switching losses, higher thermal conductivity, and stronger withstand voltage.NCE- NSIC has been deeply engaged in the power semiconductor field. Relying on years of IPM architecture design and process accumulation, it has launched a series of SiC IPM products with great force. This series of products precisely meets the domestic substitution demands of multiple scenarios, is pin-compatible with the mainstream models in the industry, and enables seamless solution replacement. It aims to help customers achieve silicon carbide upgrades at the lowest migration cost, transforming silicon carbide technology from "high-end optional" to "industry standard configuration". Five core advantages Redefine the performance boundaries of IPM ⚡ switching loss ↓70% ⚡ volume ↓30-50% ⚡ conduction loss ↓50% ⚡ efficiency ↑1-3%⚡ junction temperature 175°CUltra-low loss leads to a significant increase in the overall energy efficiency of the machineThe bandgap width of silicon carbide material reaches 3.26eV, approximately three times that of silicon. The critical breakdown electric field strength is ten times that of silicon. The electron saturation drift velocity is twice that of silicon. These physical properties enable SiC MOSFETs to have extremely low switching losses and conduction losses during the switching process. Compared with the tailing current problem existing in silicon IGBTs, SiC MOSFETs have rapid turn-off and no tailing, fundamentally eliminating the main source of turn-off loss. Taking the typical operating conditions of frequency converters as an example, compared with silicon-based IPM of the same specification, the switching loss of NSIC SiC IPM can be reduced by more than 70%, the conduction loss can be reduced by more than 50%, and the overall efficiency of the machine can be increased by 1% to 3%. In scenarios of high-power and long-term operation, this means that enterprises can save tens of thousands of yuan in electricity expenses each year, and the investment payback period is significantly shortened.Comparison of Key Parameters of SiC vs Silicon-based IPM   High-frequency adaptation, further miniaturizationLower switching losses mean that the device can operate stably at a higher switching frequency. Guogui SiC IPM supports higher operating frequencies. Under the same power output, customers can significantly reduce the volume and usage of peripheral passive components such as transformers, inductors, and capacitors. In typical applications, when the switching frequency is increased from 10kHz to 40kHz, the volume of magnetic components can be reduced by more than 50%. Combined with the compact packaging of SiC IPM itself, the overall volume of the machine is expected to be reduced by 30% to 50%, opening up design space for the miniaturization and lightweighting of terminal products. A smaller system size also means less material consumption and lower transportation costs, and the carbon footprint throughout the entire life cycle is reduced as a result. This is highly consistent with the underlying logic of green development in the new energy industry.   High temperature reliability, fearless of harsh working conditionsThe thermal conductivity of SiC material is three times that of silicon. Its bare Die (SiC Die) has a temperature resistance potential of 175°C or even 200°C, far exceeding the 150°C limit of silicon-based devices. This endows the Guosi SiC IPM module with a wider system safety margin. With its excellent high-temperature resistance and avalanche resistance, it operates more stably under harsh working conditions such as high temperature, high humidity, and strong vibration, and significantly reduces the heat dissipation requirements. This means that customers can choose smaller heat sinks or even no heat dissipation solutions at all, further reducing the system volume and cost. In scenarios with large temperature fluctuations such as outdoor photovoltaic systems and on-board power systems, the wide temperature range stable operation capability of SiC IPM can effectively reduce power loss caused by over-temperature derating, ensuring that the system still maintains rated output under extreme conditions.   High integration, more concise designNSIC SiC IPM deeply integrates silicon carbide power MOSFETs with high-voltage gate drive circuits, bootloader diodes, under-voltage protection (UVLO), temperature detection (VOT), and other functions in a single package. Customers do not need to attach independent driver ics and protection circuits externally. The peripheral BOM is significantly streamlined, the PCB wiring area is greatly reduced, and the R&D cycle is shortened by more than 30%. For customers with insufficient experience in silicon carbide applications, the "plug and play" feature of SiC IPM greatly lowers the usage threshold - there is no need to deeply understand the special requirements of SiC gate drivers, nor to handle the timing coordination between drivers and protection. Just connect to the system like using silicon-based IPM, and you can enjoy the performance dividends brought by silicon carbide.   Worry-free replacement, PIN 2 PIN seamlessly replaces the existing silicon-based solution The SiC IPM of NSIC is compatible with the pin definitions of mainstream packaging. Customers can directly replace the existing silicon-based IPM solution with PIN2PIN without major board modifications. The PCB layout and software code are almost completely modified. This means that customers do not need to re-apply for EMC certification, rewrite the driver code, or even replace the welding fixture - the upgrade from silicon to silicon carbide is merely a replacement of the material code. Under the backdrop of domestic substitution, Guogui SiC IPM offers the industry a low-risk and high-return upgrade path.   Overview of Product seriesNCE - The first batch of SiC IPM products launched by NSIC cover a 600V voltage platform, with current ratings ranging from 7A to 15A. They adopt mainstream industry packages such as PQFN5×6, SOP16W, SOP23, DIP23, and ESOP13, meeting the application requirements of different power segments.   Packaging solution   Application scenariosIndustrial frequency conversion and servo drive:In frequency converters and servo drives, the ultra-low loss and high-frequency characteristics of SiC IPM can significantly enhance the efficiency of motor drive, reduce system heat generation, decrease the volume of heat sinks, and facilitate the evolution of industrial equipment towards high efficiency, energy conservation, compactness and lightweight. Especially in multi-axis servo systems, the high-frequency characteristics of SiC IPM can significantly reduce the iron and copper losses of the motor, achieving more precise torque control.   Photovoltaic inverter and energy storage conversion:Under a 600V voltage platform, SiC IPM is particularly suitable for micro-inverters, household low-power photovoltaic systems and energy storage systems. Every 0.1% increase in efficiency means considerable power generation revenue. The high-efficiency conversion and high-temperature stable operation capabilities of SiC IPM perfectly match the core demands of photovoltaic energy storage systems for long service life and high reliability. Meanwhile, its high-frequency characteristics help reduce the volume of filter devices and lower system costs.   Variable-frequency household appliances and vehicle-mounted thermal management systems:Home appliance applications such as air conditioner compressors and refrigerator frequency conversion modules pursue quietness and energy conservation. The high-frequency characteristics of SiC IPM can significantly reduce the audible noise of the motor, improve the energy efficiency ratio, and easily meet the new first-level energy efficiency standards. In addition, in the driving scenarios of on-board auxiliary motors such as electronic water pumps and electronic air conditioning compressors in new energy vehicles, the miniaturization and high-temperature resistance advantages of 600V SiC IPM enable it to stably output in a compact and high-temperature engine compartment environment.   High-speed motors and New electric Tools:In recent years, applications such as high-speed air ducts (with speeds often exceeding 100,000 revolutions per hour) and intelligent lawn mowers with extremely harsh working environments have put forward extreme requirements for the high-frequency response and high-temperature and high-humidity tolerance of IPM modules. The high-frequency no-tailing feature and extremely low heat generation of SiC IPM perfectly solve the serious temperature rise and even burnout pain points caused by high-frequency switching and heat dissipation limitations in traditional solutions, ensuring the service life of terminal equipment under extreme working conditions.   Quick reference of application scenarios and recommended models:

Slow charging, anxiety over battery range, vehicle overheating during charging, and safety risks in high-voltage scenarios... These long-standing problems that have plagued electric vehicle owners have now all been solved with comprehensive solutions! With the 1000V high-voltage platform becoming the mainstream trend in the electric vehicle industry, the Mwahua Flash Charging 2.0 technology has pushed charging efficiency to a new level. The withstand voltage, loss, and reliability of power devices have become the core barriers determining charging speed and vehicle safety.      In response to industry pain points, BYD Semiconductor has been deeply engaged in the research and development of silicon carbide technology. It independently developed the TO-247-4 1500V SiC single tube. This product is equipped with its own high-performance SiC chip, fundamentally addressing the shortcomings of traditional components and achieving industry-leading technical indicators. It has become the core driving force engine for the megawatt fast charging 2.0, completely eliminating the stubborn charging problems of new energy vehicles and opening a new chapter in high-voltage fast charging.    Thanks to the self-developed SiC chips by BYD, this single tube features an extremely low unit-area on-resistance of 20 mΩ, which can significantly reduce energy loss during the charging process, decrease device heat generation, and make the charging process more efficient and stable. At the same time, it has a higher switching frequency, which can meet the high-speed charging requirements of the megawatt fast charging 2.0, significantly shortening the charging time and allowing car owners to say goodbye to long waiting times.           In the MW fast-charging system, the 1500V SiC single transistor is responsible for the core power conversion:  Connect 380V input Front-end conversion to direct current voltage  And then, it is efficiently boosted to a high voltage of 1000V for direct charging of the battery             What is particularly noteworthy is that the breakdown voltage (BV) of this silicon carbide single tube is 10% higher than that of similar products on the market. Its extremely strong withstand voltage performance builds a secure defense line for high-voltage charging scenarios. Even in extremely high-power working environments, it can maintain stable operation and eliminate the safety risks caused by component failures, providing comprehensive protection for the charging safety and circuit reliability of the entire vehicle. In the core circuit of the megawatt fast charging 2.0, by relying on the self-developed SiC chip and the optimized TO-247-4 packaging, this single tube still maintains low loss, low heat generation, and high stability under high-frequency, high-voltage, and high-current conditions. It enables each degree of electricity to be transmitted from the power grid to the battery with the highest efficiency, providing a perfect solution that combines efficiency and reliability for high-voltage fast charging scenarios.       From technological breakthrough to industrial implementation, the launch of this silicon carbide single tube not only demonstrates the strong R&D capabilities of our company, but also pushes the high-voltage fast-charging technology for new energy vehicles to a new level. Besides the high-voltage products specially designed for megawatt-level fast charging, BYD Semiconductor also offers a series of single tube products suitable for various fields such as new energy vehicles, wind-storage-charging, industry and household appliances. These single tubes cover various types, such as IGBT, MOSFET, SiC MOSFET, FRD and TVS, to meet the needs of different application scenarios. At the same time, it also provides diverse packaging forms, such as SOP-9 half-bridge module, QDPAK, TO-263-7L, TO-247Plus-4L, TO-247Plus-3L, TO-247-3L, TO-247-4L, TO-220-3L and TO-220F-3L, to meet various design and manufacturing requirements.      Industry evolution, technology leads the way. In the future, BYD Semiconductor will continue to deeply focus on the field of power devices, constantly breaking through technological boundaries, providing continuous core impetus for the widespread popularization of megawatt fast charging 2.0 and the high-quality development of the new energy vehicle industry, and helping all people enjoy a new green travel lifestyle that is efficient, safe and convenient!  

IoT chip evolution over 20 years, stuck at a crucial step   Twenty years ago, the task of IoT chips was very simple: just being able to connect to the internet was enough. Back then, the 2G module would transmit water meter data back to the main office, and that was considered its mission accomplished. These modular cellular chipsets were like "mute communication soldiers" - once manufactured, the operator they would use was already determined. Once installed in underground wells, their usage could not be changed anymore. The industry focused all its efforts on power consumption and sensitivity, and the management issues after connection were naturally overlooked.   Later, there were more and more scenarios for the Internet of Things, and the requirements for chips became increasingly detailed. Special low-power chips such as NB-IoT and LTE-M emerged. They can last for ten years with just one battery and can penetrate walls and cover blind spots. Chips have become more and more energy-efficient and the signals have improved, but the core logic remains the same: the connection configuration is still unchangeable from the moment it is set at the factory.   It was not until eSIM technology brought about a significant leap that the operator identification was liberated from the hardware of the SIM card and transformed into a "soft identity" that could be written onto the device wirelessly. For mobile phones and smartwatches, this was a crucial change - there was no need to change the SIM card when traveling abroad; one could simply scan a code to activate the package. The GSMA also introduced the SGP.02 standard to attempt to bring eSIM into the Internet of Things. However, it soon revealed the core problem: industrial equipment is different from mobile phones. They have no screens, no buttons, and no interactive interfaces. Although eSIM can remotely write the card, activating a new package often still requires someone to go to the scene and scan the code using a mobile app.   Thus, the IoT industry was stuck at a bottleneck: chips can be connected and can remotely write cards, but the management after the connection remains a blind spot. Once the equipment is deployed, it enters an invisible state - if the network is disconnected, no one will know; if the security certificate expires, it can only be scrapped.       The standards have changed, so the chips need to be rewritten again.   During this transformation, GSMA launched the SGP.32 specification for IoT scenarios in 2023. Compared with the SGP.02 specification previously designed for consumer devices, the most significant change in SGP.32 is that it eliminates the need for manual on-site interaction. The devices can complete configuration updates and network switching under remote operation.     ST (STMicroelectronics) is one of the earliest manufacturers to achieve the engineering implementation of the SGP.32 project. The ST4SIM-300 chip launched by ST is one of the first products in the industry that is designed based on the latest SGP.32 IoT eSIM standard of GSMA. Technically, it supports 5G SA networks and has achieved the highest industrial-level EAL6+ security certification - this means that even if the device is physically disassembled, the keys and certificates inside the chip cannot be stolen. More importantly, its design concept: from the very beginning, it is oriented towards the usage requirements of interface-less IoT devices such as "low power consumption, long-term operation, remote deployment, and high security".       After the chips, it's the management that will be tested.   The chip is just the beginning of the story. To make the ST4SIM-300 have practical value in the real world, ST chose to collaborate deeply with Red Tea Mobile, introducing its mature eIM platform and IPAd components into the entire solution.  

Recently, Omdia, a globally renowned analysis and consulting firm, released its latest research report. STMicroelectronics (ST) has once again claimed the top spot in the global general-purpose microcontroller (GP MCU) market for the fifth consecutive year, thanks to the robust capabilities of its STM32 series. By 2025, we will further expand our leading edge, with our market share climbing to 19.6%, solidifying STM32's position as a benchmark in the industry with outstanding performance.   Behind this honor lies the consistent choice and trust of global embedded developers in STM32. Since the first STM32 was launched nearly 20 years ago, we have always adhered to the same guiding principle: putting developers first.   This means that we have always focused on the needs of developers, continuously iterating on STM32 hardware and software technologies, building a full-stack support system, while firmly adhering to the commitment of high-quality and stable supply. From research and development to supply chain assurance, we safeguard every innovation of developers, making the implementation of technology more efficient and reassuring.           The users' feedback serves as the compass for product iteration, while the challenges and creativity of developers are the driving force for technological innovation. We are always in sync with global developers, integrating everyone's needs and ideas into every detail of the STM32 product roadmap, promoting the continuous upgrading and innovation of the entire product portfolio.   We are grateful to every developer for your choice and for joining us on this journey. In the future, STMicroelectronics will continue to uphold the principle of "putting developers first", creating more competitive STM32 products and solutions for everyone, and fully supporting the innovation and implementation of the next generation of embedded applications!     The definition of ST for general microcontrollers (MCUs) does not include security MCUs and automotive-grade MCUs.  Source: Omdia, "Annual 2001–2025 Semiconductor Market Share Competitive Landscape Tool", March 2026. The above results do not constitute an endorsement of STMicroelectronics. Any reliance on these results by a third party is at their own risk.  Market share is calculated based on revenue (in US dollars).  

  With the continuous improvement of battery performance requirements for new energy vehicles and energy storage systems, battery systems are evolving towards higher voltages, larger capacities and higher energy densities. This demands that the core component - the Battery Management System (BMS) - must possess higher precision, stronger monitoring capabilities and a higher safety level to consistently meet the market's strict demands for battery range, lifespan and safety. According to relevant institutions' predictions, the global BMS market size is expected to exceed 100 billion yuan by 2027, becoming a key growth area in the energy transformation. Targeting this rapidly growing market segment, the Power Integration Business Group (PIBG) of China Resources Microelectronics has launched the fifth-generation SGT MOSFET - CRSZ014N08N5Z, bringing a breakthrough in technology and product experience to the global BMS market.     △ Product package shape: TOLL       1. Product Introduction The CRSZ014N08N5Z launched by PIBG is the latest achievement of the company's 5th generation SGT technology platform. Its comprehensive performance has been significantly enhanced. Compared to the previous generation product, CRSZ014N08N5Z has made remarkable improvements in key indicators such as SOA and UIS, and can provide a safer and more reliable solution for BMS applications.     2. Product Superiority   2.1. Significant performance improvement Measurement parameters comparison: Compared with the mainstream products in the industry (with a maximum on-state resistance of approximately 1.4 mΩ), the measured RDS(on) of CRSZ014N08N5Z is the lowest. Its VTH typical value is 3.1V, which not only meets the requirement of low RDS(on) when the channel is fully open during steady-state conduction, but also enables a faster turn-off threshold during turn-off.   △ DC parameters test   SOA Characteristics: In the BMS main circuit protection and power control scenarios, the SOA characteristics of MOSFETs are the key factors for ensuring their safe and reliable operation. To meet the requirements for the safe and stable operation of the system, PIBG, based on the 5th generation SGT technology platform, has strictly defined and optimized the SOA characteristics of MOSFETs.    The actual measurement and waveform comparison show that under the same Roff conditions, when simulating the slow shutdown capability of the BMS, the short-circuit current impact capacity of CRSZ014N08N5Z has significantly improved compared to the previous generation product, giving the BMS a prominent advantage in handling extreme situations.     △ Measured SOA characteristics of the 5th generation CRSZ014N08N5Z     △ Measurement results of the SOA characteristics of the previous generation CRSZ014N08N4Z   △ The measured SOA characteristic data of CRSZ014N08N5Z compared with that of the previous generation CRSZ014N08N4Z   UIS Capability: The actual measurement data of the UIS capability for CRSZ014N08N5Z compared to the previous generation CRSZ014N08N4Z is as follows:       △ Measured UI waveform of the 5th generation CRSZ014N08N5Z     △ The actual measured UI waveform of the previous generation CRSZ014N08N4Z   Based on the significant optimization of Rsp, PIBG has significantly enhanced the SOA and UIS of the fifth-generation SGT MOSFET through innovative product design and structural optimization. This enables it to not only offer higher reliability in BMS applications, but also achieve better cost control, thus providing customers with a highly competitive and cost-effective solution.     Application Test: During the actual testing of the 120A BMS protection board of a 17-cell ternary lithium battery pack, the product was found to be capable of meeting the application requirements under extreme conditions.           2.2. Technical Highlights    Advanced 12-inch fab low-voltage ultra-small line width process; Super SOA Robustness; The Rsp value has reached the industry-leading level.     3.Product Application   The 5th generation SGT MOS product CRSZ014N08N5Z of PIBG can be widely applied in various BMS application fields, such as home storage and off-grid storage systems, as well as two-wheel and three-wheel vehicle battery systems, etc. It has already achieved mass supply to several leading enterprises in the BMS field.     4.New Product List    

The "SANKEI Technical Report" is a collection of technical papers introducing the latest technologies and products developed by the SANKEI Group to achieve an energy-saving society.      The latest issue (Vol. 57) for November 2025 has been released.  This time, we will introduce the development status of the AC/DC converter IC "STR5A300 series" to everyone.     Non-isolated flyback power supply IC  The development of the "STR5A300 series"     · Summary ·   The STR5A300 series is a power IC designed for non-isolated power applications. It features a 900V high-voltage power MOSFET and adopts a flyback topology. It offers high efficiency under light load conditions. Currently, this product is still in the development stage. The STR5A300 series has high efficiency across the entire load range, and its idle power consumption is less than 25mW. Meanwhile, to meet the application requirements in areas with unstable power supply voltages, a product series with a withstand voltage of 900V is also provided. In terms of packaging, we plan to offer plug-in DIP packaging and surface mount SMD packaging.       · Lsolated Power Supply Structure ·   The STR5A300 series integrates an error amplifier in the internal control circuit of the IC, thus eliminating the need to use peripheral components such as shunt regulators and optocouplers as in traditional isolated power supplies.      It can reduce approximately 5 components, which helps to achieve the miniaturization of the power system and lower the overall cost.       ·Functions and Features ·     【Grade-driven Control】  By utilizing our company's unique stepped drive control technology, the gate rise time of the built-in power MOSFET within the IC is optimally controlled based on the load conditions.      This can effectively suppress the reverse recovery current slope of the rectifier diode during the conduction of the MOSFET, thereby reducing the surge voltage.      As shown in Table 3, through the stepwise drive control, the VRM withstand voltage of the rectifier diode can be designed to be lower than that of the traditional scheme. Thus, while reducing costs, the circuit efficiency can be improved by reducing the VF.         【Low Power Consumption・High Efficiency at Full Load】  The following are the measured data of the STR5A361 evaluation board with an oscillation frequency of 100 kHz.      The no-load power consumption is 25mW (AC 230V), which is comparable to that of the isolated traditional products and has lower power consumption.      The working mode of the IC will automatically switch to the burst oscillation mode, Green Mode (25kHz - 100kHz), or normal operation mode (100kHz) depending on the load current.      When the load drops to the standby load condition, the working mode will switch from Green Mode to the burst oscillation mode.      In the Green Mode, the power loss is reduced by minimizing the number of switching operations. While in the Burst Oscillation Mode, the switching loss is decreased by stopping the switching action for a certain period of time, thereby enhancing the conversion efficiency of the power supply.     As shown in the figure below, by optimizing the oscillation frequency control and driving circuit, a high efficiency of approximately 88% to 89% was achieved within a wide range of output power from 5W to 23W.       · Conclusion ·   The STR5A300 series reduces the number of external components by incorporating an internal error amplifier, thereby achieving the miniaturization of the power supply system and cost reduction.      Meanwhile, through the control of stepwise driving and oscillation frequency, low power consumption and high efficiency within the full load range have been achieved.      Furthermore, this series also employs high-voltage-rated power MOSFETs and integrates an input voltage detection function, enabling safe and stable operation even in areas with unstable power supply conditions.  

ST Microelectronics announced that the STM32 general-purpose microcontrollers manufactured locally in China have now begun delivery. The first batch of ST Microelectronics STM32 wafer products, which were contracted for production by Huahong Hongli, have been successively shipped to domestic customers. This milestone marks a significant progress in ST Microelectronics' global supply chain strategy. The company plans to achieve local mass production of more STM32 product series (including high-performance, secure, and entry-level microcontrollers) by 2026.         Cao Zhiping, Executive Vice President and President of the China Region of STMicroelectronics, said: The local-scale mass production of STM32 MCU demonstrates STMicroelectronics' core commitment to its Chinese customers. We have collaborated with Huahong to build a secure, reliable and more resilient local MCU supply chain. This enables us to bring products with the same standards and performance as those in the global market to local customers. In the future, STMicroelectronics will continue to meet customers' needs with even faster speed and more precise services.     Through this collaboration, STMicroelectronics has become the first semiconductor company in the industry to establish a global product unified standard based on a dual supply chain system. It has achieved complete consistency in design and technology between its 40nm MCU produced locally in China and its overseas products. The company has built a fully localized STM32 supply chain, covering the entire process of manufacturing from wafer fabrication to chip packaging and testing.       In the front-end wafer manufacturing process, on the basis of their 15-year-long cooperation, STMicroelectronics and Huahong Hongli have further strengthened their long-term partnership. Huahong adopts the 40-nanometer embedded non-volatile memory (eNVM) technology and quality control standards that are exactly the same as those of STMicroelectronics' global wafer factories, ensuring that the locally manufactured products have seamless quality and compatibility with the global standards of STMicroelectronics. The packaging and testing process is jointly completed by STMicroelectronics' own Shenzhen packaging and testing factory and local outsourcing packaging and testing (OSAT) partners.      This manufacturing model offers domestic customers a unique dual supply chain option - they can choose either the MCU manufactured locally in China or the overseas-produced model, and both have consistent quality and full compatibility worldwide.

  With the rapid development of automotive intelligence, the market demand for high-performance, high-efficiency and highly reliable ultrasonic radar solutions is increasing day by day. The Power Integration Business Group (PIBG) of United Microelectronics Corporation, leveraging its profound technical advantages in the research and development of automotive-grade chips and IC design, has recently officially launched a new generation of automotive-grade ultrasonic radar driver and signal processing chips - QCS7209BF. This product fully supports intelligent auxiliary driving and all-scenario intelligent parking applications, helping to promote the national production process of automotive-grade ultrasonic radar drivers and signal processing chips.       Product packaging form: QFN20 (4mm × 4mm)     I. Product Introduction   The QCS7209BF product launched by PIBG has achieved international advanced performance and has passed the AEC-Q100 (Grade 2) reliability certification. The QCS7209BF sends ultrasonic signals through the driver transducer, amplifies and converts the received echo signals, and performs optimization processing such as time gain control (TGC), threshold generation (TG), threshold adjustment (TA), signal enhancement (SE), and echo detection (RWD) through the signal processing unit, thereby achieving object distance detection. The chip integrates a highly reliable main control module inside, ensuring efficient and stable operation of each functional module and taking into account low power consumption management. In addition, the chip has built-in non-volatile memory, which can be used to store factory settings and user-defined parameter configurations, fully meeting the flexibility requirements of user applications.     II. Product Advantages   Performance indicators： Power supply voltage: 7 - 18V, maximum withstand voltage 40V  Supported transducer frequency: 30 - 83 KHz  The internal circuitry integrates a high-precision clock oscillator with a frequency of 12 MHz.  Internal integrated type EEPROM  Internal integrated temperature sensor  The performance of the drive can be configured, including drive current, pulse frequency, and pulse quantity.  The amplifier gain can be configured.  Interface type: Three-wire interface  Detection range: 0.2 - 6 meters  Environmental temperature: -40 - 105℃  ESD HBM: All IO > 4KV   Characteristics of innovation: Innovative and efficient architecture design, with lower power consumption in parking standby mode  Introduce hardware protection mechanisms to enhance system stability and reliability. In case of system abnormalities, it can protect itself and resume its working state.  ESD HBM protection, all IOs > 4KV, higher ESD reliability  The built-in temperature sensor enables a calibratable design. It can be calibrated before leaving the factory, resulting in higher temperature accuracy.  Newly added low-voltage EEPROM programming and write protection functions, without the need for additional high-voltage power supply, making the system application more flexible.  Independently developed main control test system, which can flexibly adapt to the customized agile development requirements of Tier1 customers.   III. Product Applications   The QCS7209BF can be widely applied in various scenarios, including traditional parking assistance, automatic parking, blind spot monitoring, forward collision prevention, and parking distance control.       Typical Application Diagram:        

  The wide SOA (Secure Operating Area) MOSFET is widely used in applications such as hot-swapping, battery protection, and driver tubes. With the rise of fields like electric vehicles, data centers, and lasers in recent years, it has shown a vigorous market demand. NCE has launched a new 150V SGT product, NCEP15LT14T, by optimizing the device structure, effectively reducing the zero-temperature coefficient point (ZTC) of the device, significantly expanding the SOA, while also taking into account the characteristics of low on-resistance and strong short-circuit capability, helping to build high-reliability and high-performance systems.     Core Advantage         1. Lower zero temperature coefficient point (ZTC)         The zero temperature coefficient point (ZTC) represents the operating state when the temperature coefficient of the device is 0. When the device operates above the ZTC, it is in the positive temperature coefficient zone. Local temperature rise will inhibit current concentration, that is, the local current decreases as the temperature increases. At this time, the thermal stability is stronger. When the operating state is below the ZTC, it is in the negative temperature coefficient zone. Local temperature rise will promote further current concentration, that is, the local current increases as the temperature increases. The device's thermal stability is weaker at this time. A lower ZTC indicates a larger positive temperature coefficient region, allowing the device to enter a thermal stable state under lower VGS voltage and lower IDS current conditions, which is more suitable for working in the linear mode. The following figure shows the comparison of the zero temperature coefficient points of the wide SOA product NCEP15LT14T and the general platform NCEP15T14T. The test results indicate that, thanks to the optimization of the device structure, the zero temperature coefficient point of NCEP15LT14T is significantly lower than that of NCEP15T14T.     *Zero temperature coefficient test results (in the figure, the IDS current is limited by the test equipment's current)             2. Ultra-wide Safe Operating Area (SOA)         The actual measurement comparison of the thermal instability diagrams of the new wide SOA product NCEP15LT14T and the general platform NCEP15T14T SOA is as follows. Under a 1ms pulse width condition, when VDS = 40V, the maximum current of NCEP15LT14T is 97.5A, which is 1.91 times higher than the maximum current of 51.1A of NCEP15T14T; and as VDS increases, the increase in the maximum current also increases. The results show that NCEP15LT14T effectively expands the area of the SOA thermal instability limit region, and is more suitable for working in the linear mode compared to the general platform product.         *Thermal instability SOA test results       *Test platform         3. High short-circuit capacity         The short-circuit test comparison between the new wide SOA product NCEP15LT14T and the general platform NCEP15T14T is as follows:  When the test conditions are VDD = 120V and VGS = 10V, the short-circuit time of NCEP15LT14T is 32us, which is 10.6 times longer than that of NCEP15T14T (3us). When the test conditions are VDD = 120V and VGS = 15V, the short-circuit time of NCEP15LT14T is 4us, which is twice as long as that of NCEP15T14T (2us).  The test results show that the one-type short-circuit capability of NCEP15LT14T is significantly enhanced compared to NCEP15T14T.     *The short-circuit test waveforms when VGS is 10V and 15V respectively   *A type of short-circuit test results     Product Basic Features   The basic electrical parameters of the new wide SOA product NCEP15LT14T are as follows:       Application Scenarios     Industrial power supplies: Laser power supply, UPS system Electric vehicles: Automotive air conditioning fan speed controller, On-board charger Energy Storage: BMS System Communication/Server: Hot Swap     Naming Scheme         For different application scenarios, Newcell has launched various product series. In the NCEP15LT14T model, the "L" indicates that this product belongs to the wide SOA series and has been specially designed and optimized for Linear mode applications. If there is no letter here, it represents the general platform series.    

    The Stellar P3E automotive microcontroller (MCU) supports edge real-time AI applications, significantly enhancing the intelligence level of vehicles.  Simplified multi-functional integration of the "X-in-one" electronic control unit. Provide flexible and real-time performance for applications such as hybrid/electric vehicle systems and regional body architectures, while ensuring safety and response speed.         Recently, ST (STMicroelectronics) has released Stellar P3E, which is the first automotive microcontroller (MCU) to integrate an AI accelerator and is specifically designed for automotive edge intelligence. Stellar P3E is aimed at future software-defined vehicle development, and it can simplify the multi-functional integration of the "X-in-one" electronic control unit (ECU), thereby reducing system costs, weight and complexity.         The distinctive feature of Stellar P3E is the integration of the ST Neural-ART accelerator™, enabling real-time AI efficiency - making it the first MCU in the automotive industry to incorporate a neural network accelerator. This dedicated neural network processing unit adopts an advanced data flow architecture tailored for AI workloads, combined with rich sensing capabilities, to achieve intelligent sensing and pave the way for new applications such as virtual sensors.          This enables the P3E to complete reasoning processing at microsecond-level speed, with an efficiency improvement of up to 30 times compared to traditional MCU core processors. Stellar P3E supports always-online, low-power artificial intelligence (AI), enabling real-time functions such as predictive maintenance and intelligent sensing, bringing significant advantages to various applications. For instance, these capabilities can enhance the charging speed and efficiency of electric vehicles and support the rapid deployment of new functions in factories or on-site. Original Equipment Manufacturers (OEMs) can introduce new features and more intuitive behaviors through different AI models, reducing the need for additional sensors, modules, wiring, and integration work.               As the automotive industry transitions towards software-defined vehicles (SDV), the xMemory (based on STMicroelectronics' phase-change memory technology) integrated in Stellar P3E provides the necessary scalability and flexibility. This scalable storage solution has a density twice that of traditional embedded flash memory and complies with automotive environment certifications. It can dynamically expand the software storage space to accommodate new features and updates, without the need for any hardware redesign.          P3E has received comprehensive support in the ST Edge AI Suite, which is a complete edge artificial intelligence ecosystem designed for data scientists and embedded engineers, covering the entire process from dataset creation to device deployment. As part of this suite, the NanoEdge AI Studio tool is now supported for all Stellar MCU products. Additionally, Stellar P3E has been integrated into Stellar Studio - a fully customized development environment for automotive engineers by STMicroelectronics. These tools jointly form a robust hardware and software ecosystem, aiming to optimize the deployment process of complex edge artificial intelligence solutions in harsh automotive environments.       Technical Highlights: 500 MHz Arm® Cortex®-R52 core, with a CoreMark score topping the list among similar products - exceeding 8,000 points  The split-core - lockstep architecture enables designers to optimize the balance between functional safety and peak performance.  The open Arm architecture, relying on a vast global developer community, accelerates innovation.  The abundant I/O and simulation functions support a wide range of applications, including advanced motor control for enhancing vehicle dynamic performance.  

  The new PMD transceivers, including the TJA1410 for automotive applications and the TJF1410 for industrial control applications, help OEMs extend low-cost multi-point Ethernet deployment to the network edge, providing key support for building scalable software-defined vehicles (SDVs) and industrial architectures.   NXP Semiconductors has announced the launch of its first mass-produced 10BASE-T1S PMD transceiver series, including the TJA1410 for automotive applications and the TJF1410 for industrial control and building automation applications. These two devices represent a significant evolution in Ethernet technology, enabling OEMs to extend Ethernet coverage to the network edge and laying a unified and scalable network foundation for accelerating the transition to software-defined architectures.    They offer a robust Ethernet data path with the simplicity of CAN bus, significantly reducing the system cost for large-scale deployments. Among them, TJA1410 has passed comprehensive certification for automotive functional safety applications, and both of these devices comply with the latest Open Alliance TC14 specification and possess robust electromagnetic compatibility (EMC) performance.    This series of PMD transceivers divides the traditional Ethernet PHY into two parts. The digital part is integrated into the host MCU or switch, while the PMD part focuses on handling the basic analog functions required for signal transmission and reception on the physical medium. This design enables the deployment of 10Mb Ethernet to achieve lower system costs and possess the simplicity similar to that of CAN bus.       Important Significance   As automotive and industrial control systems accelerate their transition to software-defined architectures, OEMs urgently need simple and cost-effective solutions to extend Ethernet coverage to the network edge. The TJA1410 and TJF1410 can provide reliable, compact, low-pin-count, and CAN-bus-like convenient deployment solutions for Ethernet, thereby accelerating this transformation process.    By deploying 10BASE-T1S technology at the edge, OEMs can easily implement various advanced functions in the next-generation software-defined vehicles, such as AI-based sensor fusion and wireless updates (OTA), etc. This multi-point, low-cost single-pair Ethernet (SPE) solution helps reduce wiring, eliminate gateways, and integrate edge devices into a universal Ethernet backbone architecture.    In the automotive sector, this new component enables vehicle manufacturers to extend Ethernet to the body, comfort and regional architectures while meeting functional safety requirements. In the industrial control and building automation fields, it facilitates the transition from traditional field buses to secure and scalable end-to-end Ethernet networks.   Ritesh Saraf, Vice President of NXP Semiconductors and General Manager of the Ethernet Division, stated: "10BASE-T1S is a fundamental technology that ultimately enables Ethernet to reach the end nodes - whether in automotive, industrial control, or building systems. With the new PMD transceiver, we have eliminated cost and complexity barriers, providing a scalable path for partners to extend Ethernet to the edge of their networks. This new product launch sets a new benchmark for deploying cost-effective and secure Ethernet connections in the next generation of software-defined architectures."   TJA1410 is specifically designed for automotive applications that require functional safety support. It complies with the ISO 26262 ASIL B-level requirements, features robust EMC performance, extremely low static current, and supports the remote wake-up function (in accordance with the OA TC10/TC14 standards), enabling higher power efficiency. This device can be used in conjunction with lower-cost CAN FD common-mode chokes, thereby reducing the overall system cost of 10BASE-T1S networks.    Combining NXP's automotive MCUs and switch products (which integrate 10BASE-T1S ports supporting MACsec security functions, including the S32K5, S32N7 and S32J100 series), the new PMD transceiver series can form a complete system-level solution, supporting end-to-end secure Ethernet communication. OEMs can deploy scalable regional architectures and central computing architectures with built-in security and high reliability.    For industrial control and building automation applications, the TJF1410 introduces the equally transformative PMD function, enabling the replacement of traditional field buses such as Modbus or RS-485 with multi-point Ethernet. It offers advantages such as a unified network, higher scalability, and secure communication across the entire system. This device also supports demanding industrial control applications, such as building circuit breakers, and exceeds the guidance specifications for PMD transceivers in the automotive Open Alliance TC14 standard in terms of the number of nodes and cable length.      When used in conjunction with the NXP MCX A microcontroller series, the TJF1410 can provide a comprehensive 10BASE-T1S system solution for industrial control and building automation applications, thereby optimizing system costs. The upcoming new members of the MCX A series will integrate 10BASE-T1S ports and be used in combination with the TJF1410, which can simplify system complexity and reduce the bill of materials (BOM) costs.  

Under the technological trend of energy storage converters evolving towards higher power density and higher efficiency, the packaging performance of power semiconductor modules has become a key constraint factor for system-level optimization. For this reason, we are officially launching the LE2 series power modules, which are specially developed for the energy storage PCS platform. With advanced packaging architecture and material processes, they provide core power conversion solutions for the next generation of energy storage systems.     Based on LE2 package, 200A 750V INPC module         With the widespread adoption of the 1000V system architecture in the energy storage field, the      power rating of PCS has continued to increase, placing more stringent demands on the power modules: Thermal management bottleneck: Increasing the switching frequency and power density leads to a significant increase in the module's thermal flux.  Electrical stress: Higher DC bus voltage poses challenges to module insulation and dynamic voltage equalization.   Reliability requirements: The long-term continuous operation conditions of the energy storage system impose strict requirements on the power cycle and temperature cycle lifetimes.   System integration: The modules need to achieve better electrical isolation and heat dissipation paths within a limited volume.       Product Introduction   Jinlan Power Semiconductor (Wuxi) Co., Ltd. has conducted forward development on the aforementioned technical pain points and has launched products suitable for 125KW energy storage PCS: JL3I200V75SE2E7SN, and for 135KW energy storage PCS: JL3I200V75SE2E7SS. Both of these products adopt Jinlan LE2 packaging (compatible with Easy 2B packaging). They have already passed customer testing and are currently in the stage of batch supply. JL3I300V75SE2E8SS is a high-performance derivative model, and it is expected to reach 145KW. Samples have also been produced at present.           Core Technology   Excellent dynamic and static parameters, low voltage drop, low dynamic loss, suitable for high-frequency and high-power application scenarios.  Through a complete set of chip-level and package-level reliability verification. Low warpage and excellent surface thermal conductivity silicone coating effect. Select high-heat dissipation packaging materials to enhance heat dissipation and ensure output power.   Simulation Comparison of Mixed Sealing Module under 125KW Operating Condition.    (Based on the measured thermal resistance of the radiator)               Efficiency improvement: Lower Vce(sat) and reduced switching losses can enhance efficiency across the entire load range.  Power density optimization: Excellent heat dissipation performance enables higher current output or a more compact heat dissipation design. System cost reduction: High integration reduces the number of peripheral components, simplifying the complexity of thermal management design.       Application Area Photovoltaics, energy storage  Other three-level applications  

Appliance with DIPIPMTM: Compact design, powerful efficiency   On April 22, 2025, Mitsubishi Electric officially released two samples of the SLIMDIP series power semiconductor modules specifically for air conditioners and household appliances - the all-SiC SLIMDIP (PSF15SG1G6) and the hybrid-SiC SLIMDIP (PSH15SG1G6). This series offers dual technical paths of all-SiC and hybrid-SiC, enabling excellent output performance and significant power consumption reduction in various appliance applications ranging from small to large sizes. These modules provide air conditioning manufacturers with solutions that are both flexible and highly efficient.     Full SiC SLIMDIP (PSF15SG1G6) and the mixed SiC SLIMDIP with the same package (PSH15SG1G6)     In response to the urgent demands of the global home appliance market for miniaturization and high energy efficiency, Mitsubishi Electric launched the new Compact DIPIPM™ series on September 22, 2025. The packaging size of this series of modules has been reduced to approximately 53% of the existing Mini DIPIPM Ver.7 series products. The lower limit of working temperature has been extended to minus 40 degrees Celsius, ensuring the stable operation of air conditioners and other equipment equipped with this module in cold regions during winter. This core feature is particularly crucial for heat pump systems in the North American and Nordic markets. PSS30SF1F6 module, Compact DIPIPM series     New energy power generation IGBT modules: Power upgrade, green empowerment   In the field of new energy, Mitsubishi Electric achieved a significant technological breakthrough in 2025, with the 8th generation IGBT module that was officially supplied starting from February 15th being particularly remarkable.    Taking the LV100 standard packaged product (such as CM1800DW-24ME) as an example, this module is specifically designed for solar and other renewable energy power generation systems. By optimizing the layout of IGBT and diode chips, its rated current has been significantly increased from 1200A in the 7th generation to 1800A, helping to significantly enhance the output power of the inverter; at the same time, the innovative use of dual-stage split gate and deep buffer layer technology helps to reduce on-state and switching losses. In addition, the traditional packaging design is convenient for parallel connection, which can flexibly accommodate various power levels of inverter solutions, injecting strong impetus for the improvement of the efficiency of new energy power generation.   Industrial LV100 package 1.2kV IGBT module (CM1800DW-24ME)       HV modules for traction and power transmission: High voltage, heavy load, stable escort   For large industrial equipment such as rail transit vehicles, Mitsubishi Electric launched the "XB Series" large-capacity power semiconductor new products on May 1, 2025 - the 3.3kV/1500A XB Series HVIGBT module. In December 9 of the same year, it further expanded the product portfolio by introducing two 4.5kV/1200A XB Series HVIGBT modules, covering two specifications: standard insulation (6.0kVrms) packaging and high insulation (10.0kVrms) packaging.     XB series HVIGBT module (3.3kV/1500A type)     4.5kV/1200A XB series HVIGBT module (left: standard insulation package; right: high insulation package)     This series of high-capacity power modules, by adopting proprietary diode and IGBT components and combining with a unique chip terminal structure, can significantly enhance the moisture resistance performance, effectively improve the operational efficiency and reliability of large industrial equipment converters in diverse environments, and lay a solid core guarantee for the stable operation of the industrial arteries.  

Gallium Nitride (GaN) power devices feature lower on-resistance and faster switching speed, which can significantly reduce switching losses, thereby enhancing system efficiency, reducing the size of magnetic components, and improving system reliability. As a result, they are increasingly popular in the market. GaN devices were the first to achieve large-scale application in the field of fast charging in consumer electronics, and then gradually penetrated into high-power density scenarios, covering areas such as data center power supplies, photovoltaic inverters, new energy vehicle OBC (on-board charger), intelligent sensing, AC-DC and DC-DC converters, etc. They have demonstrated significant system-level performance advantages in various application scenarios.      With the advancement of large-scale production and the maturity of the supply chain, the cost of GaN devices has continued to decline, narrowing the gap with silicon-based devices. Moreover, due to the bidirectional conduction characteristic of GaN devices, they bring systematic cost advantages in applications such as fast charging of mobile phones and OVP (overvoltage protection). Against this backdrop, Wuhuan Microelectronics, based on the mature 8-inch GaN process platform and with the guarantee of complete industrial chain resources, has developed the 40V bidirectional OVP (overvoltage protection) products CRNCW048B040AZ/CRNCW048B040BZ. These two products are specifically designed to provide higher response speed and lower power consumption charging protection solutions for scenarios that are sensitive to voltage stress, such as fast charging of mobile phones and wearable devices.       Product packaging shape     Product Overview   Small size, high reliability, low cost. Trinity enhances product strength   CRNCW048B040AZ/CRNCW048B040BZ are two 40V enhanced GaN transistors that support bidirectional conduction. The products adopt WLCSP advanced packaging, with the minimum package size being only 2.1mm*2.1mm. They feature an extremely small package area and low parasitic parameters. The typical on-resistance of the devices is only 4mΩ (at VGD = 5V), with FOM ≤ 17.6mΩ.mm². The lower FOM value can ensure that the device's electrical characteristics meet the requirements while providing a higher core-out rate, thereby enhancing the product's cost-effectiveness. In summary, the PDBG 40V low-voltage bidirectional E-mode GaN product, with its core advantages of "small size, high reliability, and low cost", guarantees the long-term stable operation of the system and helps customers achieve a comprehensive improvement in product strength.     Strict assessment and certification to ensure the quality of the products for shipment   CRNCW048B040AZ/CRNCW048B040BZ have been strictly evaluated and certified in accordance with the JEDEC/JESD47 standards, ensuring that the products can operate stably for a long time under harsh conditions such as high temperature and high humidity.     Adopting the IDM model to build a secure and reliable supply chain system   Relying on the unique advantages of the IDM business model, PDBG has achieved full-chain independent production from the preparation of extrinsic materials, wafer design and manufacturing to packaging and testing, and can provide customers with long-term and stable product supply.     Product Specification     Typical application scenario - Fast charging for mobile phones   CRNCW048B040AZ/CRNCW048B040BZ features bidirectional conduction characteristics. A single product can achieve the OVP charging protection function in the mobile phone charging circuit, successfully replacing the two back-to-back connected MOSFETs in the traditional solution. By using the PDBG 40V low-voltage bidirectional E-mode GaN product, the PCB occupation area can be significantly reduced, the system cost can be lowered, and the system charging stability can be improved. This demonstrates strong solution optimization capabilities and high cost-effectiveness in "compact space, priority efficiency" scenarios, and is expected to become the mainstream application trend in the future.    Downsizing: Reduces the number of power devices by 50%, significantly reduces the PCB occupied area, releases more space for the "precious" internal space design of mobile phones, and is suitable for the trend of thinner and lighter body.    Cost reduction: By reducing the number of components and simplifying the design of the driving circuit, a dual optimization of both hardware and design costs has been achieved. This is becoming the preferred direction for the next-generation fast charging solutions of leading mobile phone manufacturers.             Product List   In the 40V bidirectional OVP subfield, compared with products of the same specification in the industry, CRNCW048B040AZ/CRNCW048B040BZ features lower Ron, higher cost competitiveness, and more stable and reliable quality assurance, helping customers reduce hardware costs and improve product cost performance.