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The latest 8th generation IGBT (Gen.8 IGBT) series launched by Xinjieneng has achieved the best balance between saturation voltage drop (VCE(sat)) and switching losses (Eon, Eoff). This series adopts an ultra-high density micro-trench gate architecture, significantly enhancing the structural density of the device and effectively reducing conduction losses. At the same time, through the design innovation of the device drift zone and buffer layer, the dual optimization of switching loss and turn-off stress has been achieved, which can take into account both system efficiency and application margin in practical applications.   This article takes a typical product in the Gen.8 series - NCE140GD120VTP4 as an example to introduce the main features of this series. This device has a rated voltage of 1200V and a rated current of 140A at 100° C. It is packaged in the TO-247Plus-4L package and is suitable for green new energy and high-efficiency application scenarios such as photovoltaic inverters, energy storage, UPS, and charging piles.   The following table shows the comparison of the measured parameters of this product with the best competitors of the same specification in the industry under the same conditions and the same equipment:   Product advantages ●The V(BR)CES in the full temperature range from -40℃ to 175℃ is greater than the rated withstand voltage ● 100% Icpuls shutdown test It can pass the more stringent HV-H3TRB assessment ● Lower conduction loss and excellent switching loss ● Extremely low turn-off VCEpeak   Application field ● Photovoltaic inverter ●Energy storage ● UPS The Ncepower Gen.8 series IGBTs will continue to introduce more specifications and models, covering six voltage platforms: 650V, 750V, 1000V, 1200V, 1400V, and 1700V. To meet the differentiated demands of various application fields, multiple sub-series are also provided for selection under the same current/voltage specifications. For instance, the S series (model NCE140GS120VTP4) with the same current/voltage specification as the NCE140GD120VTP4 is specifically designed for applications such as energy storage that have high requirements for diode surge capability, further enhancing the surge tolerance of the freewheeling diode.   The release of this product is not merely an upgrade of the parameters of a single model, but also marks that the Gen.8 IGBT technology of Xinjieneng has entered the mature mass production stage, and its performance can directly compete with or even surpass the best international competitors.   Naming rules

With the strong rise of the new energy vehicle industry, the automotive sector is experiencing a profound wave of intelligent and electrification transformation. Driven by this trend, the electronic and electrical architecture of the entire vehicle has been continuously upgraded, and the application quantity of key electronic components such as various motors, relays, and LED vehicle lights has significantly increased, putting forward higher requirements for the accuracy, response speed, and system integration of drive control.   To address increasingly complex control requirements, BYD Semiconductor has launched the high-performance half-bridge driver chip BF1112D. This chip adopts advanced circuit design and packaging technology, which can effectively simplify the peripheral circuit structure, enhance the independent control capability of multiple loads, and at the same time has high anti-interference performance and good thermal stability. It can be widely applied in various automotive application scenarios such as motor drive, relay control, and LED indicator lights. The launch of this product not only helps optimize the system layout and reduce the overall cost, but also provides a core driving force for the efficient and reliable operation of the electronic control system of new energy vehicles, marking an important step forward for domestic automotive-grade chips in key technology fields.     Ultra-low power consumption, reduced by more than 50% compared with traditional solutions The BF1112D, with its coordinated processing of multiple power domains, has achieved ultra-low power consumption performance in both sleep and working modes among similar products. Its sleep power consumption is only 0.35uA, which is over 50% lower than that of traditional solutions. When in parking sleep mode, the leakage of the starting battery is less, and it is less likely to run out of power and shut down after long-term parking.   High integration effectively reduces costs The BF1112D is a highly integrated 12-channel half-bridge driver chip that can simultaneously drive multiple types and quantities of loads to work in parallel. The chip is equipped with 24 750mΩ power transistors, with an internal resistance 12% lower than that of competing products. It has stronger shock resistance and can avoid misoperation under large surge currents such as radar probes. In the body domain control system with a high demand for channels, the peripheral BOM cost can be saved and the PCB space can be reduced (for example, for 24 channels, it is expected to be reduced by 30%).   High diagnostic coverage rate The chip adopts an efficient SPI digital communication interface, supporting flexible and precise register configuration and fault diagnosis. Each channel is equipped with independent overcurrent protection and load open circuit protection functions, which can actively identify and prevent faults caused by circuit abnormalities or environmental stress. If strong vibration or moisture causes the load (such as LED) on a certain channel to be open-circuited or short-circuited, it can be precisely located through the register, enhancing the reliability and safety of the terminal product. With its outstanding versatility and flexible channel configuration capabilities, the BF1112D can be widely applied to the drive control of various actuating devices such as DC brushed motors, stepper motors, electronic expansion valves, LED lighting arrays, and relays. This product has been mass-introduced into multiple vehicle models.   As a core driving device for key units such as the body control domain, intelligent lighting system, and thermal management module of new energy vehicles, the BF1112D provides a highly reliable and highly integrated chip-level solution for achieving intelligent and integrated control of the entire vehicle.       The successful development of BYD Semiconductor's first automotive-grade domain control driver chip is a precise positioning in response to the industry transformation of automotive electronic and electrical architecture from distributed to domain centralized. Through highly integrated design, it achieves unified and efficient control over multiple execution units, effectively enhancing system reliability, reducing wiring complexity and the overall vehicle cost. This breakthrough not only addresses the key pain points of intelligent control in current new energy vehicles, but also indicates that the company has independently mastered core technologies in the field of key chips, enhancing the supply chain security of the automotive industry chain.

High and low side independent output, advanced fault diagnosis, EMC control   Stmicroelectronics L98GD8E is a 48V automotive-grade pre-drive with an absolute maximum rated voltage of 75V. It is one of the few automotive-grade pre-drive chips that not only complies with the ISO 21780 automotive 48V electrical system standard but also integrates eight high and low-side drive channels.   The eight output channels of this chip can all be independently configured to drive external N-channel, P-channel high-side MOS switch tubes or N-channel low-side MOS switch tubes, allowing developers to flexibly control various load configurations. A single chip can control up to two H-bridge DC motor drive circuits, or control multiple relays, resistive loads or capacitive loads, and can also perform peak hold drive control on small solenoid valves. Channel 6 is suitable for driving functional safety-related loads that require dedicated enable pins.   The representative application scenarios of L98GD8E include mild hybrid powertrain systems such as powertrains and energy recovery, as well as auxiliary systems such as electric compressors and starter generators. This device can drive multiple loads. Its configuration flexibility enables developers to easily leverage the 48V grid to enhance output power and energy efficiency, reduce the current specifications of wiring harnesses and connectors, and thereby decrease the vehicle's own weight.   The L98GD8E can control the slew rate during the MOSFET switching period, ensuring that the on-board electrical system meets the requirements of electromagnetic compatibility (EMC) regulations. Meanwhile, advanced diagnostic functions help meet higher safety requirements, protect load safety, and detect faults such as short circuits to ground, short circuits to power supply, and open circuits in the on-off state of the load. Two 10-bit analog-to-digital converters are integrated on-chip to monitor the battery voltage and chip temperature in real time, and automatically and dynamically compensate for the overcurrent threshold according to various working conditions.   The L98GD8E is compatible with 3.3V and 5V logic levels and integrates a high-speed SPI interface for configuring the chip and transmitting diagnostic signals. In addition to indicating external faults, the diagnostic function also integrates an internal self-check (BIST), an internal overvoltage detection circuit hardware self-check (HWSC), and a communication detection (CC) watchdog timer. The SPI interface can also transmit battery voltage and chip junction temperature data. This device is also equipped with two disabled pins, supporting dual-redundancy rapid shutdown, further enhancing system safety.   The L98GD8E is now in mass production and comes in a 10mm×10mm TQFP64 package.      

Advanced single-chip mobile security solution, with an integrated PQC (Quantum Cryptography Resistant) hardware encryption processor Help mobile terminal manufacturers meet the future security compliance requirements, while unlocking the rich application opportunities in the consumer market and within the ecosystem It is planned to obtain the Common Criteria 2022 EUCC and EMVCo certifications in July 2026   Recently, stmicroelectronics (ST) has launched a mobile security chip. This new product, named ST54M, can help various personal consumer electronics manufacturers, including smartphones, meet the upcoming security requirements for defending against quantum attacks, while ensuring that users have a smooth and seamless experience when accessing various connected value-added services.     The ST54M integrates an innovative quantum-to-quantum (PQC) hardware encryption processor with NFC, security units and eSIM functions on a single chip, providing a powerful and future-oriented security solution for mobile Internet and network value-added services. This solution supports various application scenarios, including contactless payment, public transportation ticketing, access control, digital ID cards, driver's licenses, eSIM and digital car keys.   Adapt to various new mobile application scenarios and provide future-oriented security protection   As mobile terminals increasingly become trusted platforms for a wide range of services such as financial transactions, identity verification, telecommunications services and access control, product developers need a solution that can balance security, high performance and convenience. To meet this demand, stmicroelectronics has launched the ST54M single-chip mobile security product, enabling Oems and ecosystem partners to host multiple applications on a single platform while being well-prepared for the arrival of the quantum-resistant cryptography (PQC) era.   This product is designed for various ecosystems related to personal consumer electronics, such as operators, banks, governments, public transportation systems, automakers, digital wallets and service providers, helping device manufacturers develop devices that can balance a stable and familiar user experience with higher long-term security preparedness.   The newly launched ST54M enables customers and partners to provide quantum-resistant security implementation solutions with sufficient time to meet the industry-driven strict quantum-resistant requirements that are expected to be enforced around 2030.   David Richetto, Vice President of stmicroelectronics' Connected Security Products Division and General Manager of the Business Division, said:   We are expanding ST's mobile convergence platform product lineup. The new product, ST54M, can help customers address the constantly changing security challenges while supporting users' expectations of obtaining rich services from their devices. The ST54M integrates a single-chip PQC hardware encryption processor with NFC, embedded security units and eSIM functions, providing device manufacturers with a secure path to embrace the next generation of mobile experiences.   Designed specifically for safety protection, functional integration and RF performance   ST54M is an advanced single-chip mobile security solution that integrates an NFC controller and a security unit. It supports various mobile security applications, eSIM, and terminal products that comply with NFC standards. Its core highlight is the built-in quantum-resistant hardware encryption processor specifically designed to handle standard algorithms including ML-KEM and ML-DSA Facilitate the upgrade and evolution of hybrid encryption methods to a pure quantum-resistant cryptographic system. This hardware acceleration engine can meet the rapidly emerging PQC compliance requirements, and at the same time, it can resist side-channel attacks and fault injection attacks. It is the latest achievement of stmicroelectronics' long-term dedication to anti-quantum security technology Other achievements include the certified PQC software libraries NesLib-PQML and x-cube-pqc that are used in conjunction with the STM32 microcontroller.   In addition to the security architecture, this product also integrates a large-capacity memory that can support multiple applications and is equipped with an enhanced RF front end. These functions enable developers to achieve higher RF performance with smaller antennas and single-ended RF configurations, support more stable reader operations, and empower application scenarios with strict security requirements such as mPOS and wireless charging. This platform has passed the Common Criteria 2022 EUCC and EMVCo certification tests, proving that the chip is suitable for security-sensitive mobile applications.   Customers can now apply for ST54M samples. It is planned to start mass production and complete product certification in July 2026.

In medium and small power industrial drive and power conversion applications, system designers are always confronted with multiple challenges such as efficiency, reliability, volume and cost. Longten Semiconductor has been deeply engaged in the power device field for many years. Based on a profound understanding of application scenarios, it has launched the Easy2B IGBT module (1200V, 25A/40A), featuring a highly integrated architecture, outstanding switching and thermal management performance, as well as comprehensive process compatibility. We provide one-stop power core solutions for frequency converters, servo drives, HVAC systems and small new energy equipment.   Product model LGM25RCP12F2M LGM40RCP12F2M   This module adopts an integrated PIM topology, with rectifier, inverter and braking circuits integrated within a single module. It can directly complete AC/DC conversion, significantly reducing the number of peripheral components and wiring solder joints, simplifying system design and enhancing the overall power density of the machine.   Optimize the switching characteristics to balance efficiency and EMI Equipped with the new generation IGBT chipset and soft recovery diodes, the overall switching loss is low, the switching waveform is gentle, effectively suppressing EMI interference, and helping to simplify electromagnetic compatibility design.   Strengthen thermal management to cope with harsh thermal cycles It is equipped with an internal temperature detection device, which can monitor the operating temperature of the module in real time, facilitating the implementation of over-temperature protection in the system. The substrate is made of high thermal conductivity ceramic copper-clad material, combined with a low-cavity one-time welding process. Compared with traditional solder layers, it has lower thermal resistance and is less prone to delamination and cracking during thermal cycling. It features excellent thermal reliability. The high junction temperature design combined with a low thermal resistance structure makes it highly resistant to high temperatures and thermal fatigue, capable of withstanding complex thermal cycling conditions such as frequent starts and stops, and alternating high and low temperatures for a long time.   Optimize process adaptation to boost production efficiency The module is equipped with a split independent pin structure, featuring high assembly accuracy, stable contact resistance, and high compatibility with automated production lines, which helps customers enhance production efficiency and yield.   Improve safety regulations certification to cover multiple application scenarios The product complies with industrial safety regulations for insulation and environmental protection standards, covers multiple current ranges, and is suitable for medium and small power application scenarios.                          Servo                                         Frequency converter   As a core supplier in China's power semiconductor field, Longten Semiconductor, relying on its independently developed IGBT chip technology and advanced packaging processes, continuously provides customers with full-chain support from device selection to system application.

Energy efficiency leap, no worries about temperature rise650V SiC MOSThe range hood at home is roaring and feels hot to the touch? Do you always feel that the fan doesn't work well after being on for a long time? This is often the "little heart" hidden in the circuit board - the power devices are "heating up" in protest. In the world of motor-driven systems, high temperatures are not only killers of efficiency but also the end of lifespan. The 650V 7A SiC MOSFET - XC600M065B1G3 launched by Xinergy is specifically designed for high-efficiency power supply scenarios such as PD adapters, PC adapters, LED drivers, and white goods. With advanced planar gate technology and channel self-alignment technology, It demonstrates outstanding temperature rise control capabilities and potential for system efficiency improvement in motor-driven applications such as fans, blowers, and range hoods. 1 Breakthrough in core technology 01 Core Parameters of the product   Withstand voltage grade: 650V, perfectly meeting the bus voltage requirements after rectification of the mains power, providing sufficient safety margin for the system. Rated current: 7A, meeting the mainstream current requirements of small and medium-sized motor drives and power adapters. The gate threshold voltage (Vgs(th)) is 3.8V, which is within the mainstream range of the industry. It not only avoids false triggering but also reduces the withstand voltage requirements for the drive circuit. On-resistance (Rds(on)) : 600mΩ (@Vgs=15V), achieving a relatively low on-loss while ensuring cost control. Packaging form: TO252, compatible with the vast majority of standard drivers and heat dissipation designs on the market. The maximum junction temperature: Tjmax=175℃, endowing the device with extremely strong high-temperature operation resistance. 02 Core Advantages Analysis   In response to the urgent demand for "quietness" and "long service life" in the home appliance and motor drive fields, the XC600M065B1G3 has addressed the severe heat generation problem of traditional IGBTs from the underlying physical structure.   1. Extreme low loss, enhancing the overall efficiency of the machine The XC600M065B1G3 features the dual advantages of low conduction loss and low switching loss. During the conduction stage, a lower Rds(on) reduces heat generation when current passes through. During the switching phase, the inherent high critical breakdown electric field and low carrier recombination rate of SiC material result in extremely low energy dissipation of the device during high-frequency switching. This means that the power supply or motor system using this device can easily break through the efficiency bottleneck of traditional solutions and achieve higher energy efficiency standards.   2. Excellent temperature rise control ensures system safety Thanks to the physical properties of SiC material and the optimized chip design, the XC600M065B1G3 significantly reduces its heat generation when operating at full load. With a junction temperature tolerance of up to 175℃, the components can remain stable even when operating in high ambient temperatures (such as inside a range hood or a sealed power supply casing), effectively reducing the design pressure on the cooling system and extending the service life of the entire machine.   3. High compatibility, smooth replacement of IGBT This device is compatible with a 15V drive voltage, and its electrical characteristics allow it to directly replace traditional IGBTs in specific scenarios. For those who wish to upgrade from the IGBT solution to the SiC solution to achieve higher efficiency but are constrained by the cost of drive circuit modification, the XC600M065B1G3 offers a highly cost-effective transition and upgrade option. 2 Application Scenarios The launch of XC600M065B1G3 precisely targets the core demands of the current home appliance and small motor drive fields for "high efficiency, low noise and long service life". Its unique electrical characteristics and junction temperature tolerance up to 175℃ make it perform outstandingly in the following typical scenarios   Fans and variable frequency fans Under high-speed or full-speed operation conditions, traditional silicon-based devices often face severe heat generation challenges. The XC600M065B1G3, with its extremely low conduction and switching losses, effectively reduces the temperature of the driver board. It not only eliminates the need for bulky heat sinks but also makes it possible to achieve miniaturization and quietness of the motor, allowing household appliances to operate more "calmly".   Kitchen appliances (range hood The kitchen environment is hot and humid, and there is a large current impact at the moment the motor starts. The product's maximum junction temperature (Tjmax) of up to 175℃ endows it with extremely strong high-temperature redundancy. Combined with a stable threshold voltage, it can work reliably for a long time in harsh thermal environments, significantly reducing the failure rate caused by overheating and safeguarding the safety of home cooking.     3 Test data: Excellent in both temperature rise and efficiency   To quantitatively evaluate the performance of XC600M065B1G3 under real working conditions, we selected the 600V 6A IGBT (model: XD060H060CX1) with the same packaging from Xinergy as the reference group for testing. The test data is as follows: Temperature rise performance: Significantly reduces thermal stress   Data shows that at a similar output power level, the temperature rise of XC600M065B1G3 is 21.2℃ lower than that of IGBT. This significant difference is mainly attributed to the extremely low conduction loss and switching loss of SiC material. Lower temperature rise means that the internal thermal stress of the device is significantly reduced. This not only enhances the adaptability to harsh environments such as high temperatures in the kitchen and closed fans, but also saves customers the cost of additional heat sinks, which is the key to achieving system miniaturization.   Energy efficiency performance: Optimize system power consumption   At a working frequency of 16K, with the same packaging form and the same load conditions, the input power of the XC600M065B1G3 driver board is lower than that of the IGBT driver board. This shows that SiC MOSFETs have better conversion efficiency under high-frequency switching.   Test conclusion   This benchmarking test proved that although Xinda MAO's IGBT products performed well in the same level, the XC600M065B1G3 based on SiC material achieved a leapfrog improvement in temperature rise control by taking advantage of its inherent physical advantages. For application scenarios such as range hoods and inverter fans that have strict requirements for noise, volume and high-temperature reliability, XC600M065B1G3 offers a preferred technical solution with higher energy efficiency and lower heat consumption.   4 With "heart" as the driving force, let's march towards a green future together   As the "heart" of modern electronic devices, the performance improvement of power semiconductors is directly related to the energy efficiency of the entire system. The XC600M065B1G3 launched by Xiamen Xinergy Microelectronics this time is not only an outstanding silicon carbide MOSFET, but also an important milestone for the company to deeply explore the power chip field and empower the upgrading of downstream industries. We firmly believe that the temperature of technology should not be heat but the driving force that propels the world forward. In the future, Xinergy Microelectronics will continue to uphold the spirit of innovation, be committed to providing more high-quality domestic power semiconductor solutions, and join hands with industry partners to jointly open a new chapter of efficient and low-carbon green technology.

Against the backdrop of the continuous evolution of industrial motor drive systems towards high efficiency, high power density and high reliability, power devices are accelerating their transformation from "simple switching components" to "core drive units for system efficiency". The latest 1200V/40A IGBT product launched by Longten Semiconductor -LKB40N120UM1 adopts the Field Stop Trench IGBT technology and achieves system-level optimization among conduction loss, switching dynamic characteristics and thermal stability. Provide highly reliable power switch solutions for industrial variable frequency drive loads such as fans, pumps and compressors.   Product features Lower on-resistance This device maintains an extremely low saturation voltage drop across the entire temperature range. At room temperature, the typical value is only 1.5V, and it remains within 1.9V when the junction temperature rises to 175 ° C. This feature can effectively reduce conduction losses, alleviate the burden on the cooling system, and provide strong support for the entire machine to achieve IE3/IE4 energy efficiency grades, especially suitable for the load characteristics of long-term continuous operation of fans, pumps, compressors, etc.   Better switch Under the conditions of VCC=600V/IC=40A, the device exhibits balanced switching dynamic performance: The activation delay td(on)=69ns, and the rise time tr=49ns. The turn-off delay td(off)=282ns, and the descent time tf=228ns; The turn-on loss Eon=2.7mJ, the turn-off loss Eoff=3.3mJ, and the total switching energy is 6.0mJ. The precisely controllable switching characteristics enable it to maintain low loss even under medium-frequency PWM modulation, support better current control dynamic response, and at the same time reduce thermal design pressure, meeting the speed regulation operation requirements of general-purpose frequency converters.   Stronger thermal stability and reliability With the fine regulation of the electric Field distribution by the Field Stop Trench structure, the device maintains stable switching performance under high temperature and high current stress, and can adapt to the harsh environment of long-term and heavy-load operation in industrial sites, which helps to extend the mean time between failures of the system.   Compare with the measured data of industry benchmarks Test conditions: VGE=15V, IC=40A, Pulse Width=200μs   Conduction loss comparison The saturation voltage drop VCE (on) of Longteng IGBT LKB40N120UM1 is only 1.48V, which is superior to two industry benchmark products. It generates less heat and has a higher conduction efficiency during high-current steady-state conduction. Its energy efficiency advantage is particularly obvious under conditions where the conduction proportion is relatively high. Test conditions: VCC=960V, IC=40A, VGE=0 to 15V   Drive loss comparison: The total gate charge Qg of Longten IGBT LKB40N120UM1 is only 215.9nC, which is 26% lower than that of industry benchmark A and 12% lower than that of industry benchmark B. The drive charging loss per switch is lower, and the output capacity requirement for the drive power supply is also lower.   Short-circuit withstand capability comparison: The short-circuit withstand time of Longteng IGBT LKB40N120UM1 is basically comparable to that of mainstream benchmark products at home and abroad, providing a strong guarantee for system reliability.   Typical application scenarios The requirements for power devices in continuous operation industrial motor drives, in the final analysis, are to achieve a comprehensive balance of loss, thermal management and switching quality under long-term steady-state working conditions. The LKB40N120UM1 relies on the Field Stop Trench IGBT technology. While maintaining a low on-state voltage drop and controllable switching loss, it ensures parameter stability at high temperatures, providing a power base unit with both performance consistency and engineering reliability for fan, pump and compressor applications. It can effectively support the efficient and stable operation of industrial drive systems throughout their entire life cycle.  

News Summary NXP Semiconductors announced the launch of the SAF8444 automotive radar system-on-chip (SoC) solution. This product adopts an innovative RF design, enabling high-performance and high-efficiency applications. It also helps customers simplify thermal management design and reduce the difficulty of vehicle integration, thereby effectively lowering the overall system cost. The above advantages make it more in line with the requirements of the electric vehicle platform for the radar assembly rate.   SAF8444 is based on NXP's first 28nm RFCMOS radar single-chip architecture, facilitating the large-scale popularization of advanced L2 and L2+ level ADAS functions in affordable economy and entry-level models.   Meindert van den Beld, senior vice president of NXP Semiconductors and general manager of Radar and ADAS, said: "SAF8444 further enhances our single-chip radar product portfolio, achieving a good balance among performance, energy efficiency and cost." It helps customers reduce system costs while meeting increasingly strict security requirements, which is a key step in promoting the popularization of ADAS.   Significance With advanced driver assistance features increasingly becoming a rigid demand in various vehicle segment markets, coupled with the practical usage scenario requirements proposed by the Euro NCAP 2030 regulations (such as detecting blocked pedestrians in low-light conditions and maintaining stable performance in various weather conditions), vehicle manufacturers and Tier 1 suppliers are facing greater pressure. A perfect balance needs to be achieved among performance, regulatory compliance and cost. SAF8444 addresses the above challenges by directly integrating camera data and radar data on the chip, which can significantly reduce system complexity, power consumption and overall material costs.   In the past, meeting higher security requirements such as Euro NCAP 2030 typically meant adding more processing power and central computing resources, thereby pushing up costs, increasing thermal management loads and enhancing architectural complexity. SAF8444 has solved the above-mentioned trade-offs by achieving intelligent processing at the radar sensor end. This chip supports direct perception-level processing on the radar SoC, enabling vehicle manufacturers to reduce their reliance on central ADAS computing resources, simplify vehicle architectures, and scale up the deployment of ADAS functions that comply with regulatory requirements on more vehicle platforms worldwide.   For more details SAF8444 is manufactured using NXP's 28nm RFCMOS technology, with an operating frequency range covering 76-81GHz for automotive radar, supporting short-range, medium-range and long-range radar detection. This chip has been optimized for mainstream ADAS functions such as adaptive cruise control, automatic emergency braking, blind spot detection and assisted parking.   This device integrates embedded radar processing capabilities, including an Arm Cortex-A53 application processor, an Arm Cortex-M7 real-time core, and NXP's proprietary DSP-supported signal processing toolbox (SPT) radar accelerator.   SAF8444 integrates a powerful dual-thread radar accelerator, supporting advanced radar interference suppression functions and enabling efficient execution of computationally intensive anti-interference algorithms. As the density of radar on roads increases day by day, this function helps ensure reliable operation in a congested RF environment, meeting both current deployment requirements and providing support for future regulatory requirements.   SAF8444 is supported by NXP's comprehensive radar software and enabling ecosystem, including radar SDK, safety framework, safety components and development tools, aiming to accelerate the customer's development cycle. NXP also offers in-vehicle network and power management IC solutions, as well as algorithms that empower artificial intelligence at the network edge, achieving robust and highly accurate Angle estimation.   Supply situation The SAF8444 automotive radar single-chip SoC has been released and is currently in the pre-production stage, designed for the next-generation forward and corner radars. Currently, we can provide development support for major clients. For more information, please visit the product webpage

New product launch Trench gate SiC MOSFET wafer/Bare chip layout of Trench gate SiC MOSFET (sample rendering)   Mitsubishi Electric Corporation announced on June 4, 2026, that it will start providing samples of two new 5th generation SiC MOSFET bare chips from late June of the same year. This chip is suitable for motor-driven inverters and eAxles¹ (electric drive axles) in electric vehicles (EVs), plug-in hybrid electric vehicles (PHEVs), and other electrified vehicles (XEVs). The 5th generation SiC MOSFET chip adopts Mitsubishi Electric's unique trench gate structure ², achieving an industry-leading level ³ of low on-resistance ⁴, which is approximately 25% less than that of existing products ⁵.   This chip will be exhibited at the PCIM Expo & Conference 2026 held in Nuremberg, Germany (June 9-11, 2026), as well as at related exhibitions in Japan, China and other places.   Mitsubishi Electric's 5th generation SiC MOSFET bare chip will help enhance the performance of the xEV inverter and eAxles1, and achieve product miniaturization, thereby extending the driving range of the xEV and improving work efficiency. In addition, Mitsubishi Electric's unique manufacturing process technology can effectively suppress the performance decline of chips during long-term operation.   Product features The brand-new trench gate structure reduces the on-resistance of SiC MOSFETs, effectively enhancing the xEV driving range and operational efficiency Mitsubishi Electric's unique flat source contact (FSC) structure, novel trench grid structure, and traditional oblique ion implantation technology have increased cell density while promoting current flow, thereby achieving an industry-leading level of low on-resistance. Its on-resistance is approximately 25% lower than that of Mitsubishi Electric's existing trench gate SiC MOSFETs, which helps to enhance the performance of the xEV inverter and achieve its miniaturization, thereby extending the driving range of the xEV and improving its working efficiency.   The brand-new grooved gate SiC MOSFET manufacturing technology maintains xEV performance for a long time Mitsubishi Electric's unique manufacturing process technology can suppress performance degradation caused by the reverse recovery of body diodes, thereby helping to stabilize device quality. The brand-new trench gate SiC MOSFET can suppress the power loss and on-resistance fluctuation generated during the switching process. This is attributed to Mitsubishi Electric's proprietary technology accumulated over more than 20 years in the research and development and manufacturing of planar gate/trench gate 8SiC MOSFETs and SiC SBD9, including its unique SiC process control and distinctive gate oxide film manufacturing methods. Stable device quality will contribute to the durability of the xEV inverter and eAxles1, thereby ensuring the long-term performance of the xEV. Background Since Mitsubishi Electric launched SiC power semiconductor modules that significantly reduce power loss in 2010, these products have been widely used in inverter systems of air conditioners, industrial equipment and railway vehicles, contributing to the reduction of power consumption in household appliances, industrial equipment and railway vehicles.   In the future, Mitsubishi Electric plans to expand its supply of high-quality, low-loss SiC MOSFET bare chips for xEV and other energy-saving power electronic devices to support the green transition.

Recently, the 13th Shanghai Automotive Electronics Innovation Conference and AEIF 2026 Automotive Semiconductor Technology Application Exhibition came to a successful conclusion. At this industry feast that gathered global automotive electronics elites, BYD Semiconductor stood out with its cutting-edge technology - the BF8915A-1/BF8915B-1 automotive-grade BMS AFE chips won the "2026 Automotive Electronics Golden Chip Award - Outstanding Product Award" at one stroke, once again igniting the high moment of domestic automotive chips.              Hardcore star products build a solid defense line for battery safety   The BF8915A series products (BF8915A/BF8915B) are chips used for collecting and monitoring voltage and temperature data of high-voltage battery modules. They are equipped with a 16-bit Δ-ΣADC and a high-precision low-temperature drift voltage reference source, capable of achieving a battery measurement error of less than ±2mv. A single chip can monitor 16 voltage channels and 8 temperature channels. Through Daisy chain cascading, it can simultaneously detect hundreds of series-connected battery packs. This chip features two serial differential communication ports. Multiple chips are connected through daisy-chain communication, enabling high-speed and highly anti-interference local area communication. This daisy-chain communication can operate bidirectionally to ensure communication integrity and supports internal and external battery charge balance control. The 16 balance switches inside the chip can support a maximum internal balance discharge of 300mA. The application fields include new energy vehicles, energy storage and high-power portable devices, etc.   As the core masterpiece of BYD Semiconductor's automotive-grade BMS family, the BF8915 series has passed the strict AEC-Q100 Grade 1 automotive-grade certification, perfectly adapting to the extreme in-vehicle environment ranging from -40℃ to 125℃, ensuring the stability of the chip from the root.   Equipped with a high-precision ADC and a stable reference source, the accuracy of battery cell voltage collection is maximized, providing precise basis for battery status judgment   One-stop integrated battery temperature collection, balance control, overvoltage/overcurrent/overheat protection, Daisy chain communication and other full-scenario functions, a single chip can achieve multi-dimensional battery status monitoring   Supports flexible cascading of multiple chips, easily adapting to battery pack sizes ranging from entry-level to high-end long-range models, building an impregnable wall for the safety of the entire vehicle's battery  

With the continuous increase in the requirements for power system efficiency and power density in applications such as new energy, fast charging power sources, server power supplies, photovoltaic inverters and industrial motor drives, silicon carbide (SiC) power devices are becoming the focus of industry attention due to their excellent material properties.   Recently, Longten Semiconductor officially launched five new 650V SiC MOSFETs, with current ratings ranging from 7A to 20A and on-resistance ranges from 180mΩ to 600mΩ. This series of products adopts the highly compatible TO-252 surface mount package, which combines excellent heat dissipation performance with a miniaturized design. It is specifically designed for applications with limited space and strict performance requirements, providing a better choice for high-performance power systems. Product features High frequency and low on-resistance improve power conversion efficiency; Fast switching speed, facilitating the miniaturization of high-power density power supplies; High threshold voltage and strong anti-interference ability.   Product series LCG065R180LA4 LCG065R260LA4 LCG065R340LA4 LCG065R480LA4 LCG065R600LA4Recommended application Market significance This series of new products features a higher critical breakdown field strength, a wider bandgap width and a higher thermal conductivity. These outstanding characteristics enable them to exhibit more stable on-resistance and lower switching losses at high temperatures, thus forming significant application advantages. The TO-252 package 650V SiC MOSFET series launched by Longten Semiconductor this time enriches the range of cost-effective SiC devices available for medium and small power applications. Customers can achieve performance upgrades without modifying the existing TO-252 PCB pad design, which helps shorten the development cycle and reduce system costs.   The release of this new product marks Longteng Semiconductor's continuous deepening of its technological layout in the field of third-generation semiconductor devices. In the future, Longten Semiconductor will continue to promote the serialization and platformization development of SiC MOSFET products, helping domestic power semiconductors enhance their competitiveness in the global high-performance power supply market.

         With the advancement of photovoltaic new energy technology, 1500V smart solutions have been widely adopted in ground-mounted power stations worldwide and are also being applied in certain large-scale distributed rooftop systems. By leveraging higher voltage, greater power output, and improved capacity-to-power ratios, this solution significantly reduces overall costs. Jinlan Power Semiconductor's three LE3 215kW energy storage modules, featuring efficient heat dissipation, self-controlled chip technology, and flexible configuration options, aim to address industry pain points in 1500V applications and set a new benchmark for technological innovation in the sector.     600A 1100V INPC Module Based on LE3 Package       Product Introduction           Jinlan Power Semiconductor (Wuxi) Co., Ltd. has launched three LE3 series 215KW INPC energy storage modules, which meet various efficiency and cost requirements. They can be flexibly selected based on the actual application needs of customers. With the core of technological autonomy, modular design, and agile service, they are optimized layer by layer from chips to systems, providing "high efficiency, reliability, and flexibility" triple value for the new energy field.     The model: JL3I600V110SE3E7SS can achieve an output of over 280KW in extreme conditions when paired with Si3N4 AMB.     215KW module - Three-phase efficiency       The maximum junction temperature of the 215KW module chip         Product Feature   Excellent dynamic and static parameters, low voltage drop, low dynamic loss, suitable for high-frequency and high-power application scenarios  IGBT with BV of 1100V, taking into account both power loss and client-side voltage stress considerations  Through a complete set of chip-level and package-level reliability verification  The warpage of the finished module is controlled within 0.3mm, and the coating effect of the superior base surface thermal conductive paste is even more outstanding.  Selecting ZTA/AMB substrates ensures superior heat dissipation performance and enhanced reliability.  Open modular model, combined with customer's operating condition simulation   Core Technology   ◆Chip advantages: Equipped with the 7th generation micro-groove channel cutoff GEN.7 IGBT  ◆ Customization Expansion: Supports customers' customized requirements for multiple power ranges  ◆ Lean production: The MES and ERP systems ensure that production information in the module can be traced.       Application Area Energy storage system Photovoltaic inverter Other three-level applications

STMicroelectronics has launched two 100W high-voltage VIPerGaN converters, extending wide bandgap energy-saving technology to home appliances, building and home automation, smart lighting, as well as consumer products such as TVS and chargers.   The two newly launched power converters are the VIPerGaN100W with a leakage limit current of 3.5A and the VIPerGaN100WB with 4.2A. The latter can briefly withstand a peak power of 125W. This flexible margin prevents designers from overly redundantly designing power circuits when developing devices with inductive loads such as solenoid valves and motors, such as coffee machines, small household appliances, and air conditioners. Both converters are compatible with the globally universal AC input voltage of 85V to 265V and stably output 100W when the input voltage is above 185V.   Both converters are equipped with 700V gallium nitride (GaN) power transistors, ensuring the robustness and high reliability of the converters. The 0.27mΩ on-resistance RDS(on) of the power transistor helps the converter achieve excellent thermal performance. Within the 5mm × 6mm QFN package, a flyback converter and a GaN gate driver are also integrated, eliminating the need for designers to fine-tune the gate resistance and inductance for the cumbersome switching performance optimization debugging work.   On the other hand, the high switching frequency characteristic of GaN power transistors enables circuit designers to achieve excellent energy efficiency and power density by using small-sized passive components. To demonstrate this advantage, STMicroelectronics has launched the 100W USB Type-C PD 3.0 charger reference design EVLVIPGAN100WP based on the VIPerGaN100W design. This solution supports five power output configurations ranging from 5V/3.0A to 20V/5.0A. It adopts a secondary side regulation and optocoupler feedback architecture, with a peak efficiency exceeding 92% and a power density of 24W/in³.   Both VIPerGaN100W and VIPerGaN100WB are equipped with quasi-resonant zero-voltage switching flyback converters. They adopt flexible power management mechanisms such as light-load frequency return and medium-load valley jump period, maintaining high energy efficiency across the full load range by limiting the switching frequency. In the trough jump period mode, stmicroelectronics' self-developed trough locking technology can stably skip the number of troughs, avoid audio frequency band fluctuations, and ensure silent operation under full-load conditions. The no-load burst mode can reduce the standby power consumption to below 30mW.   In addition, the line voltage feedforward can precisely control the electrical energy transmitted in each switching cycle, maintaining a stable output power when the input voltage fluctuates. Meanwhile, the dynamic blanking time limits the variation of the switching frequency to minimize switching losses to the greatest extent. Both converters are integrated with comprehensive electrical safety protection functions, covering input and output overvoltage protection, overheat shutdown, undervoltage power-on protection, and undervoltage power-off protection.

Recently, Maplesemi Semiconductor has launched a series of 750V SiC MOSFET products. Through innovative device structure design, it has achieved a technological breakthrough in zero-voltage turn-off, effectively solving the traditional SiC MOSFET's reliance on negative voltage turn-off, and providing a simpler and more reliable solution for high-density power systems.   Core highlights of the product — Voltage rating margin above 800V, with higher avalanche capability and breakdown voltage than GaN, meeting requirements for 650V/750V applications.   — Supports zero-voltage switching, simplifying drive circuits to reduce cost and size while effectively preventing false turn-on and enhancing system reliability. The product is compatible with traditional negative-voltage shutdown mode, enabling seamless replacement of silicon-based devices and adapting to various circuit topologies.   — Excellent switching characteristics with significantly optimized dynamic parameters, helping systems achieve higher efficiency and power density.   — Superior high-temperature stability and reliability; the product maintains stable performance under elevated temperatures. Tested in our CNAS-accredited laboratory, the entire new product series has passed 1,000-hour reliability validation, ensuring long-term durability in demanding applications.   Product advantages Optimize dynamic parameters such as Qg and Ciss, which are easy to drive and have low switching losses. Enhancing the characteristics of the body diode and an extremely short reverse recovery time further reduces switching losses and improves the overall efficiency of the machine.   Market recognition and customer trust Maplesemi's silicon carbide products have been stably applied in leading domestic power supply enterprises and global top new energy vehicle enterprises. From January to October 2025, the sales of Meipusen's silicon carbide devices achieved a year-on-year growth of 49%, reflecting the market's recognition of the performance and reliability of our products. 04   New product recommendation for zero-voltage shutdown     Typical application efficiency and temperature rise tests Under different input voltages, the efficiency of SICMOS is approximately 0.5% to 1% higher than that of SJMOS. Under the input voltage conditions of AC180V and 264V, the temperature performance of MSF180075MF is better. 3. It is recommended to drive at 15 to 18V, with 18V being even better. Note The tests in this article are based on a 100W flyback power supply + secondary synchronous SR DEMO 2. The DEMO input is 180 to 264V, and the output is 24V3.8A. The load is 24V3.8A as required, and the test CC=3.8A 3. VGS drive voltage: 16V. 4. Comparison sample parameters: MSF180075MF: 750V165mΩ Competitor A: 650V130mΩ Competitor B:650V160mΩ; SJMOS: 650 v150m Ω

Recently, Longten has launched a 600V, 80A, 37mΩ N-channel super junction power MOSFET. Relying on the dual support of advanced superjunction technology and innovative platinum expansion process, the product, with its core advantages of ultra-low loss, excellent body diode characteristics, industrial-grade high reliability and strong scene adaptability, brings a brand-new upgraded solution for high-power and high-efficiency power supply applications. Craftsmanship highlights   Platinum expansion technology, significantly enhancing dynamic performance: The platinum expansion process precisely controls the minority carrier lifetime and optimizes the internal switching characteristics of the device.The measured benefits are as follows: Reduce reverse recovery charge (Qrr) : The typical value is only 722nC, reducing the reverse recovery loss of the diode. Shorten the reverse recovery time (trr) : typically 128.6ns, enhancing the system's switching frequency potential. Smoothing the peak reverse recovery current (Irm=9.05A) : Improves EMI performance and reduces the pressure on peripheral filter design.   Core electrical performance Ultra-low on-resistance: Typical RDS(on) as low as 31 mΩ (max 37 mΩ), significantly reducing conduction losses.   Extremely low gate charge: Typical Qg of 116.8 nC enables fast switching and reduces drive losses.   High current capability: Continuous drain current up to 80 A (Tc = 25°C), pulse current up to 240 A.   100% UIS tested: Single-pulse avalanche energy of 951 mJ ensures robustness under harsh operating conditions.   Actual measurement comparison Through the actual measurement and comparison of switching waveforms under the same working conditions, it is found that Longten Semiconductor's super junction MOSFET has a faster turn-on speed, shorter current trailing during turn-off, smaller VDS spikes and oscillations, a flatter Miller platform, and significantly lower turn-on/turn-off losses than mainstream industry competitors. This can effectively reduce the overall heat consumption of the machine, improve the conversion efficiency of high-frequency power supplies and operational reliability. By comparing the diode waveforms under the same working conditions, it can be seen that Longten Semiconductor's super junction MOSFET, due to the adoption of advanced platinum expansion technology, performs exceptionally well in the reverse recovery process, with a shorter reverse recovery time and a softer reverse recovery process. This feature effectively reduces switching losses and EMI interference, and enhances the system stability and heat dissipation performance under high-frequency operating conditions.   Typical application scenarios Formation power source OBC (On-Board Charger) Communication power supply Charging pile High-power industrial power supply Mining machine power supply

Longten Semiconductor's first high-voltage MOSFET based on the G3 Super Junction 650V new platform -LSD65R150G3 - has been officially released to the market. This device adopts a TO-220F fully insulated package, featuring lower on-resistance, superior gate charge and faster switching speed, providing a new generation of core power solutions for applications such as LED power supplies, high-efficiency adapters, high-power power supplies and industrial power supplies. Core advantageThe LSD65R150G3 is based on Longten Semiconductor's self-developed G3 super-junction technology platform. Through in-depth optimization of cell structure, gate design, and terminal voltage withstand capability, it significantly reduces on-resistance and parasitic capacitance per unit area while maintaining a high 650V breakdown voltage. As the first product from this platform, the LSD65R150G3 achieves a typical on-resistance of 125mΩ and a maximum of 150mΩ at 650V breakdown voltage, while keeping total gate charge as low as 34nC (typical value). This substantially reduces drive and switching losses, enabling power systems to achieve higher frequency and greater power density designs.The test results of Longten Semiconductor's application team show that compared with the previous generation of super junction products, the new generation G3 super junction product LSD65R150G3 has significantly optimized the on-resistance performance. Under the same withstand voltage, the on-resistance is lower, thereby reducing the conduction loss. At the same time, both its total gate charge (Qg) and input capacitance (Ciss) have been significantly reduced, which directly benefits the reduction of switching losses: a lower Qg can reduce driving losses and accelerate switching response, while a smaller Ciss can further increase the switching speed and reduce the demand for driving current. In addition, the avalanche tolerance of this device has been significantly enhanced, with EAS increasing by approximately five times, and its robustness has been greatly improved. It can withstand a higher single avalanche energy impact and has higher reliability under overvoltage or inductive load conditions.   Source: Measured by Longten Laboratory     The product line manager for Longteng MOSFETs stated: "Our goal in designing the G3 platform and the LSD65R150G3 was to help customers achieve higher switching frequencies and smaller form factors while effectively controlling overall system losses. Based on datasheet specifications and actual test results, the LSD65R150G3 offers stable body diode reverse recovery characteristics, sufficient avalanche ruggedness, and controllable high-temperature on-resistance, making it fully capable of serving as a core switching component in applications such as switch-mode power supplies, PD chargers, and industrial power supplies."  

In application scenarios such as new energy frequency conversion, industrial control, photovoltaic energy storage, small household appliance frequency conversion, and servo drive, energy efficiency upgrades, miniaturization, and high reliability have become essential needs in the industry. As the global carbon neutrality strategy continues to advance, countries are tightening energy efficiency standards for electrical equipment. The performance requirements of end customers for power devices have shifted from "just enough" to "breaking through the limit" - higher conversion efficiency, smaller size, and stronger environmental adaptability are reshaping the selection logic of power semiconductors. From IEC energy efficiency standards to the domestic "dual carbon" goals, from the intelligent demands of Industry 4.0 to the green consumption concept at the consumer end, power devices are undergoing a paradigm shift from "silicon-based is sufficient" to "wide bandgap is a must".Traditional silicon-based IPM is gradually approaching its performance ceiling. The physical properties of silicon materials determine that its loss in high-temperature, high-frequency and high-voltage scenarios is difficult to further reduce. The reliability degradation caused by the temperature rise of devices has also become a long-term pain point for system designers. Specifically, the tail current of silicon IGBTs leads to persistently high turn-off losses. The on-resistance of silicon MOSFETs rises sharply with temperature under high voltage, and the device lifespan shortens exponentially in high-temperature environments. These fundamental limitations of silicon-based materials are difficult to overcome merely through structural and process optimization. Facing this industry bottleneck, silicon carbide (SiC), with its natural advantages as a wide bandgap material, has become the best alternative and upgrade solution with lower switching losses, higher thermal conductivity, and stronger withstand voltage.NCE- NSIC has been deeply engaged in the power semiconductor field. Relying on years of IPM architecture design and process accumulation, it has launched a series of SiC IPM products with great force. This series of products precisely meets the domestic substitution demands of multiple scenarios, is pin-compatible with the mainstream models in the industry, and enables seamless solution replacement. It aims to help customers achieve silicon carbide upgrades at the lowest migration cost, transforming silicon carbide technology from "high-end optional" to "industry standard configuration". Five core advantages Redefine the performance boundaries of IPM ⚡ switching loss ↓70% ⚡ volume ↓30-50% ⚡ conduction loss ↓50% ⚡ efficiency ↑1-3%⚡ junction temperature 175°CUltra-low loss leads to a significant increase in the overall energy efficiency of the machineThe bandgap width of silicon carbide material reaches 3.26eV, approximately three times that of silicon. The critical breakdown electric field strength is ten times that of silicon. The electron saturation drift velocity is twice that of silicon. These physical properties enable SiC MOSFETs to have extremely low switching losses and conduction losses during the switching process. Compared with the tailing current problem existing in silicon IGBTs, SiC MOSFETs have rapid turn-off and no tailing, fundamentally eliminating the main source of turn-off loss. Taking the typical operating conditions of frequency converters as an example, compared with silicon-based IPM of the same specification, the switching loss of NSIC SiC IPM can be reduced by more than 70%, the conduction loss can be reduced by more than 50%, and the overall efficiency of the machine can be increased by 1% to 3%. In scenarios of high-power and long-term operation, this means that enterprises can save tens of thousands of yuan in electricity expenses each year, and the investment payback period is significantly shortened.Comparison of Key Parameters of SiC vs Silicon-based IPM   High-frequency adaptation, further miniaturizationLower switching losses mean that the device can operate stably at a higher switching frequency. Guogui SiC IPM supports higher operating frequencies. Under the same power output, customers can significantly reduce the volume and usage of peripheral passive components such as transformers, inductors, and capacitors. In typical applications, when the switching frequency is increased from 10kHz to 40kHz, the volume of magnetic components can be reduced by more than 50%. Combined with the compact packaging of SiC IPM itself, the overall volume of the machine is expected to be reduced by 30% to 50%, opening up design space for the miniaturization and lightweighting of terminal products. A smaller system size also means less material consumption and lower transportation costs, and the carbon footprint throughout the entire life cycle is reduced as a result. This is highly consistent with the underlying logic of green development in the new energy industry.   High temperature reliability, fearless of harsh working conditionsThe thermal conductivity of SiC material is three times that of silicon. Its bare Die (SiC Die) has a temperature resistance potential of 175°C or even 200°C, far exceeding the 150°C limit of silicon-based devices. This endows the Guosi SiC IPM module with a wider system safety margin. With its excellent high-temperature resistance and avalanche resistance, it operates more stably under harsh working conditions such as high temperature, high humidity, and strong vibration, and significantly reduces the heat dissipation requirements. This means that customers can choose smaller heat sinks or even no heat dissipation solutions at all, further reducing the system volume and cost. In scenarios with large temperature fluctuations such as outdoor photovoltaic systems and on-board power systems, the wide temperature range stable operation capability of SiC IPM can effectively reduce power loss caused by over-temperature derating, ensuring that the system still maintains rated output under extreme conditions.   High integration, more concise designNSIC SiC IPM deeply integrates silicon carbide power MOSFETs with high-voltage gate drive circuits, bootloader diodes, under-voltage protection (UVLO), temperature detection (VOT), and other functions in a single package. Customers do not need to attach independent driver ics and protection circuits externally. The peripheral BOM is significantly streamlined, the PCB wiring area is greatly reduced, and the R&D cycle is shortened by more than 30%. For customers with insufficient experience in silicon carbide applications, the "plug and play" feature of SiC IPM greatly lowers the usage threshold - there is no need to deeply understand the special requirements of SiC gate drivers, nor to handle the timing coordination between drivers and protection. Just connect to the system like using silicon-based IPM, and you can enjoy the performance dividends brought by silicon carbide.   Worry-free replacement, PIN 2 PIN seamlessly replaces the existing silicon-based solution The SiC IPM of NSIC is compatible with the pin definitions of mainstream packaging. Customers can directly replace the existing silicon-based IPM solution with PIN2PIN without major board modifications. The PCB layout and software code are almost completely modified. This means that customers do not need to re-apply for EMC certification, rewrite the driver code, or even replace the welding fixture - the upgrade from silicon to silicon carbide is merely a replacement of the material code. Under the backdrop of domestic substitution, Guogui SiC IPM offers the industry a low-risk and high-return upgrade path.   Overview of Product seriesNCE - The first batch of SiC IPM products launched by NSIC cover a 600V voltage platform, with current ratings ranging from 7A to 15A. They adopt mainstream industry packages such as PQFN5×6, SOP16W, SOP23, DIP23, and ESOP13, meeting the application requirements of different power segments.   Packaging solution   Application scenariosIndustrial frequency conversion and servo drive:In frequency converters and servo drives, the ultra-low loss and high-frequency characteristics of SiC IPM can significantly enhance the efficiency of motor drive, reduce system heat generation, decrease the volume of heat sinks, and facilitate the evolution of industrial equipment towards high efficiency, energy conservation, compactness and lightweight. Especially in multi-axis servo systems, the high-frequency characteristics of SiC IPM can significantly reduce the iron and copper losses of the motor, achieving more precise torque control.   Photovoltaic inverter and energy storage conversion:Under a 600V voltage platform, SiC IPM is particularly suitable for micro-inverters, household low-power photovoltaic systems and energy storage systems. Every 0.1% increase in efficiency means considerable power generation revenue. The high-efficiency conversion and high-temperature stable operation capabilities of SiC IPM perfectly match the core demands of photovoltaic energy storage systems for long service life and high reliability. Meanwhile, its high-frequency characteristics help reduce the volume of filter devices and lower system costs.   Variable-frequency household appliances and vehicle-mounted thermal management systems:Home appliance applications such as air conditioner compressors and refrigerator frequency conversion modules pursue quietness and energy conservation. The high-frequency characteristics of SiC IPM can significantly reduce the audible noise of the motor, improve the energy efficiency ratio, and easily meet the new first-level energy efficiency standards. In addition, in the driving scenarios of on-board auxiliary motors such as electronic water pumps and electronic air conditioning compressors in new energy vehicles, the miniaturization and high-temperature resistance advantages of 600V SiC IPM enable it to stably output in a compact and high-temperature engine compartment environment.   High-speed motors and New electric Tools:In recent years, applications such as high-speed air ducts (with speeds often exceeding 100,000 revolutions per hour) and intelligent lawn mowers with extremely harsh working environments have put forward extreme requirements for the high-frequency response and high-temperature and high-humidity tolerance of IPM modules. The high-frequency no-tailing feature and extremely low heat generation of SiC IPM perfectly solve the serious temperature rise and even burnout pain points caused by high-frequency switching and heat dissipation limitations in traditional solutions, ensuring the service life of terminal equipment under extreme working conditions.   Quick reference of application scenarios and recommended models:

Slow charging, anxiety over battery range, vehicle overheating during charging, and safety risks in high-voltage scenarios... These long-standing problems that have plagued electric vehicle owners have now all been solved with comprehensive solutions! With the 1000V high-voltage platform becoming the mainstream trend in the electric vehicle industry, the Mwahua Flash Charging 2.0 technology has pushed charging efficiency to a new level. The withstand voltage, loss, and reliability of power devices have become the core barriers determining charging speed and vehicle safety.      In response to industry pain points, BYD Semiconductor has been deeply engaged in the research and development of silicon carbide technology. It independently developed the TO-247-4 1500V SiC single tube. This product is equipped with its own high-performance SiC chip, fundamentally addressing the shortcomings of traditional components and achieving industry-leading technical indicators. It has become the core driving force engine for the megawatt fast charging 2.0, completely eliminating the stubborn charging problems of new energy vehicles and opening a new chapter in high-voltage fast charging.    Thanks to the self-developed SiC chips by BYD, this single tube features an extremely low unit-area on-resistance of 20 mΩ, which can significantly reduce energy loss during the charging process, decrease device heat generation, and make the charging process more efficient and stable. At the same time, it has a higher switching frequency, which can meet the high-speed charging requirements of the megawatt fast charging 2.0, significantly shortening the charging time and allowing car owners to say goodbye to long waiting times.           In the MW fast-charging system, the 1500V SiC single transistor is responsible for the core power conversion:  Connect 380V input Front-end conversion to direct current voltage  And then, it is efficiently boosted to a high voltage of 1000V for direct charging of the battery             What is particularly noteworthy is that the breakdown voltage (BV) of this silicon carbide single tube is 10% higher than that of similar products on the market. Its extremely strong withstand voltage performance builds a secure defense line for high-voltage charging scenarios. Even in extremely high-power working environments, it can maintain stable operation and eliminate the safety risks caused by component failures, providing comprehensive protection for the charging safety and circuit reliability of the entire vehicle. In the core circuit of the megawatt fast charging 2.0, by relying on the self-developed SiC chip and the optimized TO-247-4 packaging, this single tube still maintains low loss, low heat generation, and high stability under high-frequency, high-voltage, and high-current conditions. It enables each degree of electricity to be transmitted from the power grid to the battery with the highest efficiency, providing a perfect solution that combines efficiency and reliability for high-voltage fast charging scenarios.       From technological breakthrough to industrial implementation, the launch of this silicon carbide single tube not only demonstrates the strong R&D capabilities of our company, but also pushes the high-voltage fast-charging technology for new energy vehicles to a new level. Besides the high-voltage products specially designed for megawatt-level fast charging, BYD Semiconductor also offers a series of single tube products suitable for various fields such as new energy vehicles, wind-storage-charging, industry and household appliances. These single tubes cover various types, such as IGBT, MOSFET, SiC MOSFET, FRD and TVS, to meet the needs of different application scenarios. At the same time, it also provides diverse packaging forms, such as SOP-9 half-bridge module, QDPAK, TO-263-7L, TO-247Plus-4L, TO-247Plus-3L, TO-247-3L, TO-247-4L, TO-220-3L and TO-220F-3L, to meet various design and manufacturing requirements.      Industry evolution, technology leads the way. In the future, BYD Semiconductor will continue to deeply focus on the field of power devices, constantly breaking through technological boundaries, providing continuous core impetus for the widespread popularization of megawatt fast charging 2.0 and the high-quality development of the new energy vehicle industry, and helping all people enjoy a new green travel lifestyle that is efficient, safe and convenient!  

IoT chip evolution over 20 years, stuck at a crucial step   Twenty years ago, the task of IoT chips was very simple: just being able to connect to the internet was enough. Back then, the 2G module would transmit water meter data back to the main office, and that was considered its mission accomplished. These modular cellular chipsets were like "mute communication soldiers" - once manufactured, the operator they would use was already determined. Once installed in underground wells, their usage could not be changed anymore. The industry focused all its efforts on power consumption and sensitivity, and the management issues after connection were naturally overlooked.   Later, there were more and more scenarios for the Internet of Things, and the requirements for chips became increasingly detailed. Special low-power chips such as NB-IoT and LTE-M emerged. They can last for ten years with just one battery and can penetrate walls and cover blind spots. Chips have become more and more energy-efficient and the signals have improved, but the core logic remains the same: the connection configuration is still unchangeable from the moment it is set at the factory.   It was not until eSIM technology brought about a significant leap that the operator identification was liberated from the hardware of the SIM card and transformed into a "soft identity" that could be written onto the device wirelessly. For mobile phones and smartwatches, this was a crucial change - there was no need to change the SIM card when traveling abroad; one could simply scan a code to activate the package. The GSMA also introduced the SGP.02 standard to attempt to bring eSIM into the Internet of Things. However, it soon revealed the core problem: industrial equipment is different from mobile phones. They have no screens, no buttons, and no interactive interfaces. Although eSIM can remotely write the card, activating a new package often still requires someone to go to the scene and scan the code using a mobile app.   Thus, the IoT industry was stuck at a bottleneck: chips can be connected and can remotely write cards, but the management after the connection remains a blind spot. Once the equipment is deployed, it enters an invisible state - if the network is disconnected, no one will know; if the security certificate expires, it can only be scrapped.       The standards have changed, so the chips need to be rewritten again.   During this transformation, GSMA launched the SGP.32 specification for IoT scenarios in 2023. Compared with the SGP.02 specification previously designed for consumer devices, the most significant change in SGP.32 is that it eliminates the need for manual on-site interaction. The devices can complete configuration updates and network switching under remote operation.     ST (STMicroelectronics) is one of the earliest manufacturers to achieve the engineering implementation of the SGP.32 project. The ST4SIM-300 chip launched by ST is one of the first products in the industry that is designed based on the latest SGP.32 IoT eSIM standard of GSMA. Technically, it supports 5G SA networks and has achieved the highest industrial-level EAL6+ security certification - this means that even if the device is physically disassembled, the keys and certificates inside the chip cannot be stolen. More importantly, its design concept: from the very beginning, it is oriented towards the usage requirements of interface-less IoT devices such as "low power consumption, long-term operation, remote deployment, and high security".       After the chips, it's the management that will be tested.   The chip is just the beginning of the story. To make the ST4SIM-300 have practical value in the real world, ST chose to collaborate deeply with Red Tea Mobile, introducing its mature eIM platform and IPAd components into the entire solution.  

Recently, Omdia, a globally renowned analysis and consulting firm, released its latest research report. STMicroelectronics (ST) has once again claimed the top spot in the global general-purpose microcontroller (GP MCU) market for the fifth consecutive year, thanks to the robust capabilities of its STM32 series. By 2025, we will further expand our leading edge, with our market share climbing to 19.6%, solidifying STM32's position as a benchmark in the industry with outstanding performance.   Behind this honor lies the consistent choice and trust of global embedded developers in STM32. Since the first STM32 was launched nearly 20 years ago, we have always adhered to the same guiding principle: putting developers first.   This means that we have always focused on the needs of developers, continuously iterating on STM32 hardware and software technologies, building a full-stack support system, while firmly adhering to the commitment of high-quality and stable supply. From research and development to supply chain assurance, we safeguard every innovation of developers, making the implementation of technology more efficient and reassuring.           The users' feedback serves as the compass for product iteration, while the challenges and creativity of developers are the driving force for technological innovation. We are always in sync with global developers, integrating everyone's needs and ideas into every detail of the STM32 product roadmap, promoting the continuous upgrading and innovation of the entire product portfolio.   We are grateful to every developer for your choice and for joining us on this journey. In the future, STMicroelectronics will continue to uphold the principle of "putting developers first", creating more competitive STM32 products and solutions for everyone, and fully supporting the innovation and implementation of the next generation of embedded applications!     The definition of ST for general microcontrollers (MCUs) does not include security MCUs and automotive-grade MCUs.  Source: Omdia, "Annual 2001–2025 Semiconductor Market Share Competitive Landscape Tool", March 2026. The above results do not constitute an endorsement of STMicroelectronics. Any reliance on these results by a third party is at their own risk.  Market share is calculated based on revenue (in US dollars).